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FDMQ8203
Schede tecniche

FDMQ8203

MOSFET 2N/2P-CH 100V/80V 12-MLP
Numero di parte
FDMQ8203
Produttore/Marchio
ON Semiconductor
Serie
GreenBridge™ PowerTrench®
Stato della parte
Active
Confezione
Digi-Reel®
temperatura di esercizio
-55°C ~ 150°C (TJ)
Tipo di montaggio
Surface Mount
Pacchetto/custodia
12-WDFN Exposed Pad
Potenza: max
2.5W
Pacchetto dispositivo del fornitore
12-MLP (5x4.5)
Tipo FET
2 N and 2 P-Channel (H-Bridge)
Funzionalità FET
Logic Level Gate
Dallo scarico alla tensione di origine (Vdss)
100V, 80V
Corrente - Scarico continuo (Id) a 25�C
3.4A, 2.6A
Rds attivo (max) @ Id, Vgs
110 mOhm @ 3A, 10V
Vgs(esimo) (Max) @ Id
4V @ 250µA
Carica gate (Qg) (max) @ Vgs
5nC @ 10V
Capacità di ingresso (Ciss) (Max) @ Vds
210pF @ 50V
Richiedi preventivo
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In magazzino 34493 PCS
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