Triode/MOS tube/transistor/module
BORN (Born Semiconductor)
Produttore
N-Channel Enhancement Mode Field Effect Transistor
Descrizione
Tokmas (Tokmas)
Produttore
MSKSEMI (Mesenco)
Produttore
Type: N-Channel Drain-Source Voltage (Vdss): 30V Continuous Drain Current (Id): 60A On-Resistance (RDS(on)@Vgs,Id): 6mΩ@10V 9Ω@4.5V, Threshold Voltage (Vgs(th )@Id): 1.2V@250uA
Descrizione
N-channel, 600V, 4A, 2.5Ω@10V
Descrizione
NCE (Wuxi New Clean Energy)
Produttore
MATSUKI (pine wood)
Produttore
P-channel, low-voltage MOSFETs
Descrizione
onsemi (Ansemi)
Produttore
Automotive power MOSFETs capable of withstanding high energy in avalanche and commutation modes. Suitable for low voltage high speed switching applications in power supplies, converters and power motor control. These devices are especially useful in bridge circuits where diode speed and commutation safe operating regions are critical, providing additional safety margin against unintended transient voltages. AEC-Q101 qualified MOSFETs with Production Part Approval Process (PPAP) capability for automotive applications.
Descrizione
TECH PUBLIC (Taizhou)
Produttore
ElecSuper (Jingxin Micro)
Produttore
ST (STMicroelectronics)
Produttore
BLUE ROCKET (blue arrow)
Produttore
SHIKUES (Shike)
Produttore
onsemi (Ansemi)
Produttore
This P-channel logic level MOSFET is produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining low gate charge for excellent switching performance. These devices are ideal for low-voltage and battery-powered applications that require low in-line power loss in a very small surface-mount enclosure.
Descrizione
ST (STMicroelectronics)
Produttore
onsemi (Ansemi)
Produttore
Voltage VDSS600V, conduction resistance Rds5 ohms, charge Qg13nC, current ID2A
Descrizione
HUASHUO (Huashuo)
Produttore
JSMSEMI (Jiesheng Micro)
Produttore