Triode/MOS tube/transistor/module
Samwin (Semipower)
Produttore
DIODES (US and Taiwan)
Produttore
VISHAY (Vishay)
Produttore
N-channel, 100V, 32A, 0.011Ω@10V
Descrizione
SILAN (Silan Micro)
Produttore
HUASHUO (Huashuo)
Produttore
AGM-Semi (core control source)
Produttore
Type: N-Channel Drain-Source Voltage (Vdss): 40V Continuous Drain Current (Id): 46A Power (Pd): 28W On-Resistance (RDS(on)@Vgs,Id): 4.4mΩ@10V,20A Threshold Voltage (Vgs(th)@Id): 1.6V@250uA Gate Charge (Qg@Vgs): 13.5nC@10V Input Capacitance (Ciss@Vds): 0.842nF@20V , Vds=40V Id=46A Rds=4.4mΩ, Working temperature: -55℃~+150℃@(Tj) DFN3*3encapsulation;
Descrizione
SILAN (Silan Micro)
Produttore
N-channel 600V 1A
Descrizione
VBsemi (Wei Bi)
Produttore
ISC (Wuxi Solid Electric)
Produttore
VBsemi (Wei Bi)
Produttore
VBsemi (Wei Bi)
Produttore
APM (Jonway Microelectronics)
Produttore
LGE (Lu Guang)
Produttore
SPTECH (Shenzhen Quality Super)
Produttore
NPN 115W 60V 10A Applications: Designed as a high quality amplifier that works up to 60 watts into a 4 ohm load.
Descrizione
SPTECH (Shenzhen Quality Super)
Produttore
NPN 115W 60V 10A Applications: Designed as a high quality amplifier that works up to 60 watts into a 4 ohm load.
Descrizione
WINSOK (Weishuo)
Produttore
Configuration N+P Type P-Ch VDS(V) -40 VGS(V) 20 ID(A)Max. -5.2 VGS(th)(v) -1.5 RDS(ON)(m?)@4.345V 81 Qg( nC)@4.5V 6.4 QgS(nC) 2.1 Qgd(nC) 2.5 Ciss(pF) 650 Coss(pF) 68 Crss(pF) 55
Descrizione
SHIKUES (Shike)
Produttore
onsemi (Ansemi)
Produttore
This high voltage NPN bipolar transistor is a spin-off of our popular SOT-23 3-lead device. The device is suitable for general switching applications and comes in a SOT-723 surface mount encapsulation. The device is suitable for low power surface mount applications where board space is at a premium.
Descrizione