SI3430DV-T1-GE3

Product Category: Power MOSFET

Basic Information Overview: - Category: Power semiconductor - Use: Switching and amplifying electronic signals in power applications - Characteristics: High voltage and current handling capabilities, low on-state resistance, fast switching speed - Package: DFN (Dual Flat No-Lead) - Essence: Efficient power management and control - Packaging/Quantity: Tape and reel, 3000 units per reel

Specifications: - Voltage Rating: 30V - Current Rating: 12A - On-State Resistance: 8.5mΩ - Gate Threshold Voltage: 1V - Power Dissipation: 2.5W

Detailed Pin Configuration: - Pin 1: Source - Pin 2: Gate - Pin 3: Drain - Pin 4: Drain

Functional Features: - Low on-state resistance for minimal power loss - Fast switching speed for efficient power control - Enhanced thermal performance for reliability

Advantages: - High efficiency in power management - Compact DFN package for space-saving designs - Suitable for high-frequency applications

Disadvantages: - Sensitive to overvoltage conditions - Limited maximum voltage rating compared to some alternatives

Working Principles: The SI3430DV-T1-GE3 operates based on the principles of field-effect transistors, utilizing the control of an electric field to modulate the flow of current through the device.

Detailed Application Field Plans: - DC-DC converters - Motor control systems - Power supplies - LED lighting

Detailed and Complete Alternative Models: - Infineon IPP60R190C6 - Vishay Si7157DP

This comprehensive entry provides a detailed overview of the SI3430DV-T1-GE3, covering its category, use, characteristics, package, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.