SI2323DS-T1

Product Overview

Category

The SI2323DS-T1 belongs to the category of MOSFET transistors.

Use

It is commonly used as a switching device in electronic circuits.

Characteristics

• Low on-resistance
• High-speed switching
• Low gate drive voltage
• Small package size

Package

The SI2323DS-T1 is typically available in a small SOT-23 package.

Essence

This MOSFET transistor is essential for controlling power flow in various electronic applications.

Packaging/Quantity

It is usually supplied in reels with quantities varying based on manufacturer specifications.

Specifications

• Drain-Source Voltage (Vdss): 20V
• Continuous Drain Current (Id): 2.8A
• Rds On (Max) @ Id, Vgs: 70 mOhm @ 2.8A, 4.5V
• Vgs (Max): ±8V
• Gate Charge (Qg) @ Vgs: 6.5nC @ 4.5V

Detailed Pin Configuration

The SI2323DS-T1 has three pins: 1. Source (S) 2. Gate (G) 3. Drain (D)

Functional Features

• Fast switching speed
• Low power consumption
• High efficiency

Advantages and Disadvantages

Advantages

• Small package size
• Low on-resistance
• Suitable for low-voltage applications

Disadvantages

• Limited maximum drain-source voltage
• Sensitivity to static electricity

Working Principles

The SI2323DS-T1 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the source and drain terminals.

Detailed Application Field Plans

The SI2323DS-T1 is widely used in: - Battery management systems - Power supply units - LED lighting control - Portable electronic devices

Detailed and Complete Alternative Models

Some alternative models to the SI2323DS-T1 include: - SI2301DS-T1 - SI2333DS-T1 - SI2319DS-T1

In conclusion, the SI2323DS-T1 MOSFET transistor offers high performance in a compact package, making it suitable for various low-power electronic applications.

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