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RUS100N02TB
Product Overview
Category
The RUS100N02TB belongs to the category of power MOSFETs.
Use
It is used as a switching device in various electronic circuits and applications.
Characteristics
- Low on-resistance
- High current capability
- Fast switching speed
- Low gate drive power
- Low input capacitance
Package
The RUS100N02TB is typically available in a TO-263 package.
Essence
This MOSFET is essential for efficient power management and control in electronic devices and systems.
Packaging/Quantity
It is commonly packaged in reels or tubes, with quantities varying based on manufacturer specifications.
Specifications
- Drain-Source Voltage (VDS): 24V
- Continuous Drain Current (ID): 100A
- On-Resistance (RDS(on)): 2mΩ
- Gate-Source Voltage (VGS): ±20V
- Total Gate Charge (Qg): 60nC
- Operating Temperature: -55°C to 175°C
Detailed Pin Configuration
The pin configuration of the RUS100N02TB typically includes three pins: Gate (G), Drain (D), and Source (S).
Functional Features
- Low on-resistance for minimal power loss
- High current handling capability
- Fast switching speed for efficient operation
- Low gate drive power requirement for improved efficiency
Advantages
- Efficient power management
- Suitable for high-current applications
- Fast and reliable switching performance
Disadvantages
- Sensitive to static electricity
- Requires careful handling during installation
Working Principles
The RUS100N02TB operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. When the gate-source voltage is applied, it creates an electric field that modulates the conductivity of the channel, allowing for effective switching and control of power flow.
Detailed Application Field Plans
The RUS100N02TB is widely used in various applications, including: - Power supplies - Motor control - Inverters - DC-DC converters - Battery management systems
Detailed and Complete Alternative Models
Some alternative models to the RUS100N02TB include: - IRF100N02 - FDP100N02 - STP100N02
In conclusion, the RUS100N02TB power MOSFET offers efficient power management and control capabilities, making it suitable for a wide range of electronic applications.
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10 domande e risposte comuni relative all'applicazione di RUS100N02TB nelle soluzioni tecniche
What is the maximum drain-source voltage for RUS100N02TB?
- The maximum drain-source voltage for RUS100N02TB is 20V.
What is the continuous drain current rating of RUS100N02TB?
- The continuous drain current rating of RUS100N02TB is 100A.
What is the on-resistance (RDS(on)) of RUS100N02TB?
- The on-resistance (RDS(on)) of RUS100N02TB is typically 2.5mΩ at VGS = 10V.
What is the gate threshold voltage of RUS100N02TB?
- The gate threshold voltage of RUS100N02TB is typically 1.0V.
What is the power dissipation of RUS100N02TB?
- The power dissipation of RUS100N02TB is 125W.
What are the typical applications for RUS100N02TB?
- RUS100N02TB is commonly used in power management, motor control, and other high-current switching applications.
What is the operating temperature range for RUS100N02TB?
- The operating temperature range for RUS100N02TB is -55°C to 175°C.
Does RUS100N02TB have built-in protection features?
- RUS100N02TB does not have built-in protection features and may require external circuitry for overcurrent or overtemperature protection.
Is RUS100N02TB suitable for automotive applications?
- Yes, RUS100N02TB is suitable for automotive applications due to its high current handling capability and wide operating temperature range.
What are the recommended mounting and soldering techniques for RUS100N02TB?
- It is recommended to follow the manufacturer's guidelines for PCB layout, thermal management, and soldering techniques to ensure reliable performance of RUS100N02TB in technical solutions.