ON Semiconductor
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NTGD3148NT1G
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NTGD3148NT1G

Product Overview

Category

The NTGD3148NT1G belongs to the category of power MOSFETs.

Use

It is commonly used in electronic circuits for switching and amplification purposes.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge

Package

The NTGD3148NT1G is typically available in a TO-252 package.

Essence

This MOSFET is essential for efficient power management in various electronic applications.

Packaging/Quantity

It is usually packaged in reels with a quantity of 2500 units per reel.

Specifications

  • Drain-Source Voltage (VDS): 100V
  • Continuous Drain Current (ID): 5.7A
  • On-Resistance (RDS(on)): 0.065 ohms
  • Power Dissipation (PD): 2.5W
  • Gate-Source Voltage (VGS): ±20V

Detailed Pin Configuration

The NTGD3148NT1G has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • Low conduction losses
  • Enhanced ruggedness
  • ESD protection
  • Avalanche energy rating

Advantages

  • High efficiency
  • Reliable performance
  • Suitable for high-frequency applications
  • Robust construction

Disadvantages

  • Sensitive to static electricity
  • Requires careful handling during assembly

Working Principles

The NTGD3148NT1G operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

This MOSFET is widely used in: - Switching power supplies - Motor control - LED lighting - Battery management systems

Detailed and Complete Alternative Models

Some alternative models to NTGD3148NT1G include: - IRF540N - FQP30N06L - STP55NF06L

In conclusion, the NTGD3148NT1G power MOSFET offers high-performance characteristics suitable for a wide range of electronic applications, making it an essential component in modern power management systems.

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10 domande e risposte comuni relative all'applicazione di NTGD3148NT1G nelle soluzioni tecniche

  1. What is NTGD3148NT1G?

    • NTGD3148NT1G is a N-channel MOSFET designed for use in power management applications.

  2. What is the maximum drain-source voltage of NTGD3148NT1G?

    • The maximum drain-source voltage of NTGD3148NT1G is 30V.

  3. What is the typical on-resistance of NTGD3148NT1G?

    • The typical on-resistance of NTGD3148NT1G is 14mΩ at Vgs=10V.

  4. What are the typical applications of NTGD3148NT1G?

    • NTGD3148NT1G is commonly used in battery protection, load switching, and power distribution applications.

  5. What is the maximum continuous drain current of NTGD3148NT1G?

    • The maximum continuous drain current of NTGD3148NT1G is 50A.

  6. What is the gate threshold voltage of NTGD3148NT1G?

    • The gate threshold voltage of NTGD3148NT1G typically ranges from 1V to 2.5V.

  7. Is NTGD3148NT1G suitable for automotive applications?

    • Yes, NTGD3148NT1G is suitable for automotive applications due to its high current handling capability and low on-resistance.

  8. Does NTGD3148NT1G require a heat sink for high-power applications?

    • Depending on the specific application and power dissipation, a heat sink may be required for high-power applications using NTGD3148NT1G.

  9. What are the thermal characteristics of NTGD3148NT1G?

    • NTGD3148NT1G has a junction-to-ambient thermal resistance of 40°C/W.

  10. Can NTGD3148NT1G be used in synchronous rectification circuits?

    • Yes, NTGD3148NT1G can be used in synchronous rectification circuits to improve efficiency and reduce power losses.