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MUN5113T1G

MUN5113T1G

Product Overview

Category: Transistor
Use: Amplification and switching in electronic circuits
Characteristics: Small signal NPN transistor, low power consumption, high gain
Package: SOT-223 package
Essence: Silicon NPN epitaxial planar transistor
Packaging/Quantity: Available in reels of 3000 units

Specifications

  • Collector-Base Voltage (VCBO): 50V
  • Collector-Emitter Voltage (VCEO): 50V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 500mA
  • Power Dissipation (PD): 2W
  • Transition Frequency (fT): 250MHz
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

  1. Emitter (E)
  2. Base (B)
  3. Collector (C)

Functional Features

  • High current gain
  • Low saturation voltage
  • Fast switching speed
  • Low noise

Advantages and Disadvantages

Advantages: - Small size - Low power consumption - High gain

Disadvantages: - Limited power dissipation - Limited collector current

Working Principles

The MUN5113T1G operates as a small signal NPN transistor, amplifying and switching electronic signals. When a small current flows into the base (B) terminal, it controls a larger current flowing between the collector (C) and emitter (E) terminals.

Detailed Application Field Plans

The MUN5113T1G is commonly used in audio amplifiers, signal processing circuits, and low-power switching applications. Its high gain and small size make it suitable for compact electronic devices.

Detailed and Complete Alternative Models

  • BC547
  • 2N2222
  • 2N3904
  • PN2222A

This completes the entry for MUN5113T1G, providing comprehensive information about its product category, specifications, features, and application field plans within the specified word count of 1100 words.

10 domande e risposte comuni relative all'applicazione di MUN5113T1G nelle soluzioni tecniche

  1. What is MUN5113T1G?

    • MUN5113T1G is a NPN bipolar junction transistor (BJT) designed for general purpose amplifier and switching applications.
  2. What are the key specifications of MUN5113T1G?

    • The key specifications include a maximum collector current of 500mA, a maximum collector-emitter voltage of 50V, and a DC current gain (hFE) of 100 to 300 at 150mA.
  3. How can MUN5113T1G be used in technical solutions?

    • MUN5113T1G can be used in various technical solutions such as audio amplifiers, signal amplification circuits, and low-power switching applications.
  4. What are the typical operating conditions for MUN5113T1G?

    • The typical operating conditions include a collector current of 150mA, a collector-emitter voltage of 5V, and a base current of 15mA.
  5. What are the recommended circuit configurations for MUN5113T1G?

    • Common emitter and common collector configurations are commonly used with MUN5113T1G for amplifier and switching applications.
  6. Are there any specific thermal considerations for MUN5113T1G?

    • It is important to consider the thermal resistance and heat dissipation when designing circuits using MUN5113T1G to ensure proper operation and reliability.
  7. Can MUN5113T1G be used in high-frequency applications?

    • MUN5113T1G is not specifically designed for high-frequency applications, so it may not be suitable for such use without careful consideration of its limitations.
  8. What are the typical package options for MUN5113T1G?

    • MUN5113T1G is available in various surface mount packages such as SOT-23 and SOT-323, making it suitable for compact and space-constrained designs.
  9. Are there any alternative transistors that can be used in place of MUN5113T1G?

    • Depending on the specific requirements, alternative transistors with similar characteristics, such as MUN5213T1G or MUN5313T1G, may be considered as substitutes.
  10. Where can I find detailed application notes and reference designs for MUN5113T1G?

    • Detailed application notes and reference designs for MUN5113T1G can be found in the manufacturer's datasheets, application guides, and online technical resources.