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MUN5113T1G
Product Overview
Category: Transistor
Use: Amplification and switching in electronic circuits
Characteristics: Small signal NPN transistor, low power consumption, high gain
Package: SOT-223 package
Essence: Silicon NPN epitaxial planar transistor
Packaging/Quantity: Available in reels of 3000 units
Specifications
- Collector-Base Voltage (VCBO): 50V
- Collector-Emitter Voltage (VCEO): 50V
- Emitter-Base Voltage (VEBO): 5V
- Collector Current (IC): 500mA
- Power Dissipation (PD): 2W
- Transition Frequency (fT): 250MHz
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
- Emitter (E)
- Base (B)
- Collector (C)
Functional Features
- High current gain
- Low saturation voltage
- Fast switching speed
- Low noise
Advantages and Disadvantages
Advantages: - Small size - Low power consumption - High gain
Disadvantages: - Limited power dissipation - Limited collector current
Working Principles
The MUN5113T1G operates as a small signal NPN transistor, amplifying and switching electronic signals. When a small current flows into the base (B) terminal, it controls a larger current flowing between the collector (C) and emitter (E) terminals.
Detailed Application Field Plans
The MUN5113T1G is commonly used in audio amplifiers, signal processing circuits, and low-power switching applications. Its high gain and small size make it suitable for compact electronic devices.
Detailed and Complete Alternative Models
- BC547
- 2N2222
- 2N3904
- PN2222A
This completes the entry for MUN5113T1G, providing comprehensive information about its product category, specifications, features, and application field plans within the specified word count of 1100 words.
10 domande e risposte comuni relative all'applicazione di MUN5113T1G nelle soluzioni tecniche
What is MUN5113T1G?
- MUN5113T1G is a NPN bipolar junction transistor (BJT) designed for general purpose amplifier and switching applications.
What are the key specifications of MUN5113T1G?
- The key specifications include a maximum collector current of 500mA, a maximum collector-emitter voltage of 50V, and a DC current gain (hFE) of 100 to 300 at 150mA.
How can MUN5113T1G be used in technical solutions?
- MUN5113T1G can be used in various technical solutions such as audio amplifiers, signal amplification circuits, and low-power switching applications.
What are the typical operating conditions for MUN5113T1G?
- The typical operating conditions include a collector current of 150mA, a collector-emitter voltage of 5V, and a base current of 15mA.
What are the recommended circuit configurations for MUN5113T1G?
- Common emitter and common collector configurations are commonly used with MUN5113T1G for amplifier and switching applications.
Are there any specific thermal considerations for MUN5113T1G?
- It is important to consider the thermal resistance and heat dissipation when designing circuits using MUN5113T1G to ensure proper operation and reliability.
Can MUN5113T1G be used in high-frequency applications?
- MUN5113T1G is not specifically designed for high-frequency applications, so it may not be suitable for such use without careful consideration of its limitations.
What are the typical package options for MUN5113T1G?
- MUN5113T1G is available in various surface mount packages such as SOT-23 and SOT-323, making it suitable for compact and space-constrained designs.
Are there any alternative transistors that can be used in place of MUN5113T1G?
- Depending on the specific requirements, alternative transistors with similar characteristics, such as MUN5213T1G or MUN5313T1G, may be considered as substitutes.
Where can I find detailed application notes and reference designs for MUN5113T1G?
- Detailed application notes and reference designs for MUN5113T1G can be found in the manufacturer's datasheets, application guides, and online technical resources.