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BUV26G
Introduction
The BUV26G is a power transistor belonging to the category of discrete semiconductor devices. This entry provides an overview of its basic information, specifications, detailed pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.
Basic Information Overview
- Category: Discrete Semiconductor Device
- Use: Power Transistor
- Characteristics: High voltage, high speed switching
- Package: TO-220AB
- Essence: Power amplification and switching
- Packaging/Quantity: Typically packaged in reels or tubes, quantity varies by manufacturer
Specifications
- Voltage - Collector Emitter Breakdown (Max): 450V
- Current - Collector (Ic) (Max): 8A
- Power - Max: 125W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 5V
- Frequency - Transition: 4MHz
Detailed Pin Configuration
The BUV26G typically has three pins: 1. Collector (C) 2. Base (B) 3. Emitter (E)
Functional Features
- High voltage capability
- Fast switching speed
- Low saturation voltage
Advantages and Disadvantages
Advantages
- Suitable for power amplification and switching applications
- High breakdown voltage
- Fast switching speed
Disadvantages
- Higher power dissipation compared to some alternative models
- Larger package size may limit use in space-constrained designs
Working Principles
The BUV26G operates based on the principles of bipolar junction transistors, utilizing its high voltage and fast switching characteristics to amplify and switch power signals.
Detailed Application Field Plans
The BUV26G is commonly used in the following applications: - Switching power supplies - Motor control - Audio amplifiers - Electronic ballasts
Detailed and Complete Alternative Models
Some alternative models to the BUV26G include: - BUV25G - BUV27G - MJF18004D - MJF18006D
In summary, the BUV26G is a high-voltage, high-speed power transistor suitable for various power amplification and switching applications. Its key features include high breakdown voltage, fast switching speed, and suitability for diverse applications such as switching power supplies, motor control, and audio amplifiers.
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10 domande e risposte comuni relative all'applicazione di BUV26G nelle soluzioni tecniche
What is BUV26G?
- BUV26G is a high-voltage, high-speed NPN power transistor designed for use in various technical solutions requiring robust performance.
What are the key features of BUV26G?
- BUV26G features a high voltage capability, fast switching speed, and low saturation voltage, making it suitable for demanding applications.
In what technical solutions can BUV26G be used?
- BUV26G can be used in power supplies, motor control, electronic ballasts, and other applications requiring high-voltage switching.
What is the maximum voltage and current rating for BUV26G?
- The maximum voltage rating for BUV26G is typically around 450V, and the maximum current rating is approximately 10A.
What are the thermal characteristics of BUV26G?
- BUV26G has low thermal resistance and is designed to operate within a wide temperature range, making it suitable for challenging thermal environments.
Does BUV26G require any special heat dissipation measures?
- Yes, due to its high-power capabilities, BUV26G may require appropriate heat sinking or thermal management to ensure reliable operation.
Are there any specific application notes or guidelines for using BUV26G?
- Yes, the datasheet for BUV26G provides detailed application notes, including recommended circuit configurations and thermal considerations.
Can BUV26G be used in automotive applications?
- Yes, BUV26G is suitable for certain automotive applications, such as electronic control units and motor drives, where high voltage and fast switching are required.
What are the typical failure modes for BUV26G?
- Common failure modes for BUV26G include overvoltage stress, overcurrent conditions, and excessive junction temperature, which can lead to device breakdown.
Where can I purchase BUV26G transistors?
- BUV26G transistors are available through authorized distributors and can be sourced from various semiconductor suppliers worldwide.