ON Semiconductor
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BC856BDW1T1G
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BC856BDW1T1G

Product Overview

Category

The BC856BDW1T1G belongs to the category of small signal transistors.

Use

It is commonly used in low power amplification and switching applications.

Characteristics

  • Low voltage, high current capability
  • High hFE (DC current gain)
  • Low noise

Package

The BC856BDW1T1G comes in a SOT-323 package.

Essence

This transistor is essential for amplifying and switching electronic signals in various circuits.

Packaging/Quantity

The BC856BDW1T1G is typically packaged in reels with a quantity of 3000 units per reel.

Specifications

  • Collector-Base Voltage (VCBO): 80V
  • Collector-Emitter Voltage (VCEO): 65V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 100mA
  • Power Dissipation (PD): 250mW
  • Transition Frequency (fT): 150MHz

Detailed Pin Configuration

The BC856BDW1T1G has three pins: 1. Emitter (E) 2. Base (B) 3. Collector (C)

Functional Features

  • High current gain
  • Low saturation voltage
  • Fast switching speed

Advantages

  • Small package size
  • Low noise performance
  • Wide range of operating temperatures

Disadvantages

  • Limited power dissipation capability
  • Relatively low collector current compared to other transistors

Working Principles

The BC856BDW1T1G operates based on the principles of bipolar junction transistors, where the flow of current between the emitter and collector is controlled by the base current.

Detailed Application Field Plans

This transistor is widely used in audio amplifiers, signal processing circuits, and low-power switching applications. It is also suitable for use in sensor interfaces and voltage regulators.

Detailed and Complete Alternative Models

Some alternative models to the BC856BDW1T1G include: - BC846BDW1T1G - BC847BDW1T1G - BC848BDW1T1G

In conclusion, the BC856BDW1T1G is a versatile small signal transistor with excellent amplification and switching capabilities, making it an essential component in various electronic circuits.

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10 domande e risposte comuni relative all'applicazione di BC856BDW1T1G nelle soluzioni tecniche

Sure, here are 10 common questions and answers related to the application of BC856BDW1T1G in technical solutions:

  1. What is the maximum collector current of BC856BDW1T1G?

    • The maximum collector current of BC856BDW1T1G is 100mA.

  2. What is the typical hFE (DC current gain) of BC856BDW1T1G?

    • The typical hFE of BC856BDW1T1G is 200-450 at a collector current of 2mA.

  3. What is the maximum power dissipation of BC856BDW1T1G?

    • The maximum power dissipation of BC856BDW1T1G is 250mW.

  4. What are the typical applications of BC856BDW1T1G?

    • BC856BDW1T1G is commonly used in audio amplification, signal processing, and general switching applications.

  5. What is the maximum Vce (collector-emitter voltage) of BC856BDW1T1G?

    • The maximum Vce of BC856BDW1T1G is 65V.

  6. Is BC856BDW1T1G suitable for low noise amplifier circuits?

    • Yes, BC856BDW1T1G is suitable for low noise amplifier circuits due to its low noise characteristics.

  7. Can BC856BDW1T1G be used in high-frequency applications?

    • Yes, BC856BDW1T1G can be used in high-frequency applications due to its high transition frequency (fT) of 150MHz.

  8. What is the package type of BC856BDW1T1G?

    • BC856BDW1T1G is available in a SOT-323 surface mount package.

  9. Does BC856BDW1T1G have a complementary PNP transistor?

    • Yes, the complementary PNP transistor to BC856BDW1T1G is BC846BDW1T1G.

  10. What are the recommended operating conditions for BC856BDW1T1G?

    • The recommended operating conditions for BC856BDW1T1G include a collector current (Ic) of 100mA, a collector-base voltage (Vcb) of 80V, and a power dissipation (Ptot) of 250mW.