MT48H8M16LFB4-6:K TR

Product Overview

Category

The MT48H8M16LFB4-6:K TR belongs to the category of dynamic random access memory (DRAM) chips.

Use

This product is primarily used in computer systems, servers, and other electronic devices that require high-speed data storage and retrieval.

Characteristics

• High-speed operation: The MT48H8M16LFB4-6:K TR offers fast data transfer rates, making it suitable for applications that demand quick access to large amounts of data.
• Large storage capacity: With a capacity of 8 megabits (1 megabyte), this DRAM chip can store a significant amount of information.
• Low power consumption: The chip is designed to operate efficiently, consuming minimal power during its operation.
• Compact package: The MT48H8M16LFB4-6:K TR comes in a small form factor package, allowing for easy integration into various electronic devices.
• RoHS compliant: This product adheres to the Restriction of Hazardous Substances directive, ensuring its environmental friendliness.

Packaging/Quantity

The MT48H8M16LFB4-6:K TR is typically packaged in tape and reel format, providing ease of handling during manufacturing processes. It is available in quantities suitable for both small-scale and large-scale production.

Specifications

• Memory Type: Dynamic Random Access Memory (DRAM)
• Organization: 8 Megabits x 16 bits
• Operating Voltage: 3.3V
• Speed Grade: 6
• Package Type: FBGA (Fine-Pitch Ball Grid Array)
• Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The MT48H8M16LFB4-6:K TR features a fine-pitch ball grid array (FBGA) package with a total of 54 pins. The pin configuration is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. VSS
29. A8
30. A9
31. A10
32. A11
33. A12
34. A13
35. A14
36. A15
37. VSS
38. BA0
39. BA1
40. RAS#
41. CAS#
42. WE#
43. CKE
44. CS#
45. VSS
46. CLK
47. DQM0
48. DQM1
49. VSS
50. DM0
51. DM1
52. VCC
53. VCC
54. VSS

Functional Features

The MT48H8M16LFB4-6:K TR offers the following functional features:

• Random Access: The chip allows for random access to any memory location, enabling efficient data retrieval.
• Burst Mode: It supports burst mode operation, allowing for consecutive data transfers without the need for repeated address input.
• Auto Refresh: The DRAM chip automatically performs periodic refresh cycles to maintain data integrity.
• Self-Refresh: It has a self-refresh mode that reduces power consumption when the chip is idle.

Advantages and Disadvantages

Advantages

• High-speed operation enables quick data access.
• Large storage capacity accommodates substantial amounts of information.
• Low power consumption contributes to energy efficiency.
• Compact package facilitates integration into various electronic devices.
• RoHS compliance ensures environmental friendliness.

Disadvantages

• Requires periodic refresh cycles, which can temporarily interrupt data access.
• Sensitive to electrical noise and requires proper signal conditioning for optimal performance.

Working Principles

The MT48H8M16LFB4-6:K TR operates based on the principles of dynamic random access memory. It stores data in capacitors within its memory cells, which need to be periodically refreshed to maintain the stored information. When a read or write operation is initiated, the chip accesses the specific memory location using the provided address and transfers the data accordingly.

Detailed Application Field Plans

The MT48H8M16LFB4-6:K TR finds applications in various fields, including:

1.