MT47H64M8CF-25E IT:G

Product Overview

Category

The MT47H64M8CF-25E IT:G belongs to the category of dynamic random access memory (DRAM) chips.

Use

This product is primarily used in electronic devices such as computers, smartphones, and tablets for storing and accessing data quickly.

Characteristics

• High-speed data storage and retrieval capabilities
• Volatile memory that requires constant power supply
• Offers large storage capacity
• Compatible with various electronic devices

Package

The MT47H64M8CF-25E IT:G is typically packaged in a small form factor integrated circuit (IC) package.

Essence

The essence of this product lies in its ability to provide fast and efficient data storage and retrieval functions in electronic devices.

Packaging/Quantity

The MT47H64M8CF-25E IT:G is usually sold in bulk packaging, with each package containing multiple units of the DRAM chip.

Specifications

• Model: MT47H64M8CF-25E IT:G
• Memory Type: Dynamic Random Access Memory (DRAM)
• Capacity: 64 megabits (8 megabytes)
• Speed: 25 nanoseconds (ns)
• Interface: Synchronous DRAM (SDRAM)
• Operating Voltage: 2.5 volts (V)
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The MT47H64M8CF-25E IT:G has a specific pin configuration that enables it to be connected to the electronic device's memory bus. The detailed pin configuration is as follows:

1. VDD: Power supply voltage
2. DQ0-DQ7: Data input/output pins
3. A0-A12: Address input pins
4. WE: Write enable pin
5. CAS: Column address strobe pin
6. RAS: Row address strobe pin
7. CLK: Clock input pin
8. CKE: Clock enable pin
9. CS: Chip select pin
10. DQM: Data mask pins

Functional Features

• High-speed data transfer rate
• Low power consumption
• Easy integration into electronic devices
• Reliable and stable performance
• Compatibility with various memory controllers

Advantages and Disadvantages

Advantages

• Fast data access and retrieval
• Large storage capacity
• Low power consumption
• Compatibility with different electronic devices
• Reliable performance

Disadvantages

• Volatile memory requires constant power supply
• Limited lifespan compared to non-volatile memory
• Sensitive to electrical disturbances

Working Principles

The MT47H64M8CF-25E IT:G operates based on the principles of dynamic random access memory. It stores data in capacitors within the memory cells, which need to be refreshed periodically to maintain the stored information. When a read or write operation is initiated, the memory controller sends the appropriate signals to the DRAM chip, allowing data to be accessed or written.

Detailed Application Field Plans

The MT47H64M8CF-25E IT:G can be used in various electronic devices that require high-speed data storage and retrieval capabilities. Some potential application fields include:

1. Personal Computers (PCs)
2. Laptops and Notebooks
3. Servers and Data Centers
4. Smartphones and Tablets
5. Gaming Consoles
6. Networking Equipment

Detailed and Complete Alternative Models

1. MT47H128M8CF-25E IT:G - 128 megabit (16 megabyte) variant of the same DRAM chip.
2. MT47H32M16HR-25E IT:G - 32 megabit (4 megabyte) variant with higher data transfer rate.
3. MT47H64M16HR-25E IT:G - 64 megabit (8 megabyte) variant with higher data transfer rate and improved power efficiency.

(Note: The above alternative models are provided for reference purposes and may not represent an exhaustive list of alternatives available in the market.)

In conclusion, the MT47H64M8CF-25E IT:G is a dynamic random access memory chip that offers high-speed data storage and retrieval capabilities. It is widely used in various electronic devices and provides advantages such as fast performance and large storage capacity. However, it also has limitations such as volatility and sensitivity to electrical disturbances.