MT46V64M8CY-5B:J

Product Overview

Category

The MT46V64M8CY-5B:J belongs to the category of dynamic random access memory (DRAM) chips.

Use

This product is primarily used in computer systems and electronic devices for data storage and retrieval purposes.

Characteristics

• High-speed operation
• Large storage capacity
• Low power consumption
• Compact package size

Package

The MT46V64M8CY-5B:J is available in a small outline, dual in-line memory module (SODIMM) package.

Essence

The essence of this product lies in its ability to provide fast and efficient data storage and retrieval capabilities for various electronic devices.

Packaging/Quantity

The MT46V64M8CY-5B:J is typically packaged in trays or reels, with each unit containing a single chip. The exact quantity may vary depending on the supplier.

Specifications

• Memory Type: DDR SDRAM
• Capacity: 64 Megabits (8 Megabytes)
• Organization: 8M x 8
• Speed: 5ns (nanoseconds)
• Voltage: 3.3V
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The MT46V64M8CY-5B:J has a total of 54 pins, which are arranged as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. NC
12. A0
13. A1
14. A2
15. A3
16. A4
17. A5
18. A6
19. A7
20. VSS
21. A8
22. A9
23. A10
24. A11
25. A12
26. A13
27. A14
28. A15
29. VSS
30. /CAS
31. /RAS
32. /WE
33. /CS0
34. /CS1
35. /CS2
36. /CS3
37. VSS
38. DQM0
39. DQM1
40. VDD
41. VDD
42. VDD
43. VDD
44. VDD
45. VDD
46. VDD
47. VDD
48. VDD
49. VDD
50. VDD
51. VDD
52. VDD
53. VDD
54. VDD

Functional Features

• High-speed data transfer
• Random access capability
• Refresh functionality for maintaining data integrity
• Low power consumption in standby mode
• Error correction capabilities

Advantages and Disadvantages

Advantages

• Fast data access and retrieval
• Large storage capacity
• Low power consumption
• Compact package size
• Error correction capabilities

Disadvantages

• Relatively higher cost compared to other memory technologies
• Sensitive to electrical noise and interference

Working Principles

The MT46V64M8CY-5B:J operates based on the principles of dynamic random access memory (DRAM). It stores data as electrical charges in tiny capacitors within the memory cells. These charges need to be periodically refreshed to maintain their integrity. When data is requested, the memory controller activates the appropriate row and column addresses to read or write the data.

Detailed Application Field Plans

The MT46V64M8CY-5B:J is widely used in various electronic devices and computer systems, including but not limited to: - Personal computers - Laptops - Servers - Networking equipment - Printers - Gaming consoles - Mobile devices

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to the MT46V64M8CY-5B:J include: - Samsung K4H511638C-LCCC - Micron MT48LC16M16A2P-75:C - Hynix HY57V641620FTP-H

These models have comparable specifications and can be used as alternatives depending on availability and specific requirements.

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