MT46H128M16LFB7-6 WT:B TR

Basic Information Overview

• Category: Memory module
• Use: Used in electronic devices for data storage and retrieval
• Characteristics: High capacity, fast data transfer rate, low power consumption
• Package: Small form factor, surface mount technology (SMT)
• Essence: Provides non-volatile storage for digital information
• Packaging/Quantity: Typically sold in reels or trays containing multiple units

Specifications

• Part Number: MT46H128M16LFB7-6 WT:B TR
• Memory Type: Synchronous Dynamic Random Access Memory (SDRAM)
• Capacity: 128 Megabytes (MB)
• Organization: 16 Megabits x 16 bits
• Speed Grade: DDR3-1600 (PC3-12800)
• Operating Voltage: 1.5 Volts
• Operating Temperature Range: -40°C to +85°C
• RoHS Compliance: Yes

Detailed Pin Configuration

The MT46H128M16LFB7-6 WT:B TR memory module has a total of 60 pins arranged in a specific configuration. The pinout diagram is as follows:

```

Pin Name Description

1 VDD Power Supply 2 DQ0 Data Input/Output Bit 0 3 DQ1 Data Input/Output Bit 1 4 DQ2 Data Input/Output Bit 2 5 DQ3 Data Input/Output Bit 3 ... 60 VSS Ground ```

Functional Features

• High-speed data transfer: The memory module supports DDR3-1600 speed grade, allowing for efficient data transfer between the module and the host device.
• Low power consumption: The module operates at a voltage of 1.5V, minimizing power consumption and extending battery life in portable devices.
• Error correction: It incorporates error correction code (ECC) functionality, ensuring data integrity and reliability.
• On-die termination: The module features on-die termination (ODT), which helps to reduce signal reflections and improve signal quality.

Advantages and Disadvantages

Advantages: - High capacity: With a capacity of 128MB, it can store a large amount of data. - Fast data transfer rate: The DDR3-1600 speed grade enables quick access to stored information. - Low power consumption: Helps conserve energy in electronic devices. - Error correction capability: Enhances data reliability.

Disadvantages: - Limited compatibility: The module is designed for devices that support DDR3 memory technology. - Relatively small capacity: May not be suitable for applications requiring larger storage capacities.

Working Principles

The MT46H128M16LFB7-6 WT:B TR memory module operates based on the principles of synchronous dynamic random access memory (SDRAM). It stores digital information in an array of capacitors, with each capacitor representing a single bit of data. The module synchronizes its operations with the system clock, allowing for efficient data transfers between the module and the host device.

Detailed Application Field Plans

The MT46H128M16LFB7-6 WT:B TR memory module finds application in various electronic devices, including but not limited to: - Personal computers - Laptops and notebooks - Servers - Networking equipment - Consumer electronics (e.g., gaming consoles, set-top boxes)

Detailed and Complete Alternative Models

• MT46H64M16LFCK-5 IT:A TR
• MT46H32M16LFBF-6 IT:A TR
• MT46H16M16LFBF-6 IT:A TR
• MT46H8M16LFBF-6 IT:A TR
• MT46H4M16LFBF-6 IT:A TR

These alternative models offer different capacities and speed grades, providing flexibility to suit various system requirements.

Note: The content provided above is a sample entry and may not reflect the actual specifications or details of the mentioned product. Please refer to the official documentation for accurate information.