MT29F1G08ABBEAH4-ITX:E

Product Overview

Category

MT29F1G08ABBEAH4-ITX:E belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29F1G08ABBEAH4-ITX:E offers a storage capacity of 1 gigabit.
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick read and write operations.
• Reliable performance: This NAND flash memory ensures reliable performance with low power consumption.
• Compact package: The product comes in a small form factor, making it suitable for space-constrained applications.
• Durable design: It is designed to withstand harsh environmental conditions, ensuring data integrity.

Package and Quantity

MT29F1G08ABBEAH4-ITX:E is available in a surface-mount TSOP package. The quantity may vary depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 1 Gb
• Interface: NAND
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 200 Mbps
• Package Type: TSOP

Pin Configuration

The detailed pin configuration of MT29F1G08ABBEAH4-ITX:E is as follows:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VCC | Power supply voltage | | 2 | ALE | Address latch enable | | 3 | CLE | Command latch enable | | 4 | CE# | Chip enable | | 5 | RE# | Read enable | | 6 | WE# | Write enable | | 7-14 | A0-A7 | Address inputs | | 15-22 | I/O0-I/O7 | Data input/output | | 23 | R/B# | Ready/Busy status | | 24 | VSS | Ground |

Functional Features

MT29F1G08ABBEAH4-ITX:E offers the following functional features:

• Page Program Operation: It allows data to be programmed in page-sized increments, enhancing efficiency.
• Block Erase Operation: The product supports block erase operation, enabling quick and efficient erasure of data.
• Random Access: It provides random access to any memory location, facilitating fast data retrieval.
• Error Correction Code (ECC): ECC functionality ensures data integrity by detecting and correcting errors during read and write operations.
• Wear-Leveling Algorithm: This feature evenly distributes data writes across memory blocks, extending the lifespan of the NAND flash memory.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Reliable performance
• Compact package size
• Durable design for harsh environments

Disadvantages

• Limited endurance compared to other non-volatile memory technologies
• Relatively higher cost per gigabit compared to alternative memory solutions

Working Principles

MT29F1G08ABBEAH4-ITX:E operates based on the principles of NAND flash memory technology. It utilizes a grid of memory cells that store data as electrical charges. These charges are trapped within floating gate transistors, representing binary values. The data can be read, written, or erased using specific voltage levels and control signals.

Application Field Plans

MT29F1G08ABBEAH4-ITX:E finds applications in various electronic devices, including but not limited to: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems

Alternative Models

Here are some alternative models that offer similar functionality to MT29F1G08ABBEAH4-ITX:E:

1. MT29F1G08ABAEAWP-ITX:E
2. MT29F1G08ABAEAH4-ITX:E
3. MT29F1G08ABAEAWP-ITE:E
4. MT29F1G08ABAEAH4-ITE:E

These alternative models provide comparable storage capacity, performance, and features, making them suitable replacements for MT29F1G08ABBEAH4-ITX:E.

In conclusion, MT29F1G08ABBEAH4-ITX:E is a NAND flash memory product with high storage capacity, fast data transfer rate, and reliable performance. It is widely used in various electronic devices and offers several advantages such as compact size and durability. However, it has limitations in