MT29F1G08ABBDAH4-ITX:D

Product Overview

Category

MT29F1G08ABBDAH4-ITX:D belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F1G08ABBDAH4-ITX:D offers a storage capacity of 1 gigabit (1 Gb), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With its high-speed interface, this NAND flash memory enables quick read and write operations, ensuring efficient data processing.
• Reliable performance: The product is designed to provide reliable and consistent performance, making it suitable for demanding applications.
• Low power consumption: The MT29F1G08ABBDAH4-ITX:D is energy-efficient, consuming minimal power during operation, which helps prolong battery life in portable devices.
• Compact package: This NAND flash memory comes in a small form factor, making it easy to integrate into various electronic devices.

Packaging/Quantity

The MT29F1G08ABBDAH4-ITX:D is typically packaged in surface mount technology (SMT) packages, such as ball grid array (BGA) or thin small outline package (TSOP). The quantity per package may vary depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 1 Gb
• Interface: NAND
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 200 megabytes per second (MB/s)
• Erase/Program Cycles: Up to 10,000 cycles

Detailed Pin Configuration

The MT29F1G08ABBDAH4-ITX:D has a standard pin configuration as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. A0-A18: Address inputs
4. CLE: Command latch enable
5. ALE: Address latch enable
6. CE# or#CE: Chip enable
7. RE# or #RE: Read enable
8. WE# or #WE: Write enable
9. R/B# or #R/B: Ready/busy status
10. DQ0-DQ7: Data input/output

Functional Features

• Page Program: The MT29F1G08ABBDAH4-ITX:D allows data to be programmed in page mode, enabling efficient and fast programming of multiple data pages.
• Block Erase: This NAND flash memory supports block erase operations, allowing for the simultaneous erasure of multiple blocks, enhancing overall performance.
• Error Correction Code (ECC): The product incorporates ECC algorithms to ensure data integrity and reliability by detecting and correcting errors during read and write operations.
• Wear Leveling: The wear leveling feature evenly distributes program/erase cycles across memory blocks, extending the lifespan of the NAND flash memory.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Reliable performance
• Low power consumption
• Compact package size

Disadvantages

• Limited erase/program cycles compared to other non-volatile memory technologies
• Susceptible to data loss in case of power failure during write operations

Working Principles

The MT29F1G08ABBDAH4-ITX:D utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each memory cell can store multiple bits of information using a floating-gate transistor. When data is written, electrons are trapped in the floating gate, representing a logical "1." To erase data, a high voltage is applied to remove the trapped electrons, resetting the cell to a logical "0." The NAND flash memory operates by reading and writing data in pages and erasing data in blocks.

Detailed Application Field Plans

The MT29F1G08ABBDAH4-ITX:D finds extensive application in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

• MT29F1G08ABADAWP-ITX:D
• MT29F1G08ABAEAWP-ITX:D
• MT29F1G08ABBEAWP-ITX:D
• MT29F1G08ABBFAWP-ITX:D
• MT29F1G08ABBGAJP-ITX:D

These alternative models offer similar specifications and functionality to the MT29F