MT29F1G01AAADDH4-IT:D

Product Overview

Category

The MT29F1G01AAADDH4-IT:D belongs to the category of NAND flash memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F1G01AAADDH4-IT:D offers a storage capacity of 1 gigabit (1 Gb), allowing for ample data storage.
• Fast data transfer rate: With its advanced architecture, this NAND flash memory provides high-speed data transfer, enabling efficient read and write operations.
• Reliable performance: The product ensures reliable performance with built-in error correction codes (ECC) that help detect and correct data errors.
• Low power consumption: The MT29F1G01AAADDH4-IT:D is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: It comes in a small form factor package, allowing for easy integration into various electronic devices.

Packaging/Quantity

The MT29F1G01AAADDH4-IT:D is typically packaged in surface mount technology (SMT) packages. The exact packaging type may vary depending on the manufacturer. It is commonly available in reels or trays, with quantities ranging from hundreds to thousands per package.

Specifications

• Memory Type: NAND Flash
• Capacity: 1 Gb
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Package Type: TSOP (Thin Small Outline Package)
• Pin Count: 48 pins

Detailed Pin Configuration

The pin configuration of the MT29F1G01AAADDH4-IT:D is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. CE#
26. CLE#
27. RE#
28. WE#
29. WP#
30. R/B#
31. DQ0
32. DQ1
33. DQ2
34. DQ3
35. DQ4
36. DQ5
37. DQ6
38. DQ7
39. DQS
40. DQS#
41. NC
42. NC
43. NC
44. GND
45. GND
46. NC
47. NC
48. NC

Functional Features

• Page Read/Program/Erase: The MT29F1G01AAADDH4-IT:D supports page-level read, program, and erase operations, allowing for efficient data manipulation.
• Block Management: It incorporates advanced block management algorithms to optimize the usage of memory blocks and extend the product's lifespan.
• Wear Leveling: This feature evenly distributes write operations across memory cells, preventing premature wear-out of specific areas and ensuring overall longevity.
• Bad Block Management: The NAND flash memory automatically detects and manages bad blocks, enhancing data integrity and reliability.
• Error Correction Codes (ECC): Built-in ECC functionality helps detect and correct errors that may occur during data transfer or storage.

Advantages and Disadvantages

Advantages

• High storage capacity enables ample data storage.
• Fast data transfer rate for efficient read and write operations.
• Reliable performance with built-in ECC functionality.
• Low power consumption, suitable for battery-powered devices.
• Compact package allows for easy integration into various electronic devices.

Disadvantages

• Limited endurance: NAND flash memory has a finite number of program/erase cycles, which may affect its lifespan in certain applications.
• Relatively higher cost compared to other types of non-volatile memory.

Working Principles

The MT29F1G01AAADDH4-IT:D utilizes the principles of NAND flash memory technology. It consists of multiple memory cells organized in a grid-like structure. Each cell can store multiple bits of data by varying the charge level on a floating gate transistor.

During read operations, the charge level of each memory cell is measured to determine the stored data. For programming, an electric charge is applied to the floating gate, altering its charge level and thus storing new data. Erasing involves removing the charge from the floating gate, resetting the cell to its initial state