M29W400DB70ZE6E

Product Overview

Category

M29W400DB70ZE6E belongs to the category of flash memory chips.

Use

It is primarily used for data storage in electronic devices such as computers, smartphones, tablets, and other digital devices.

Characteristics

• Non-volatile: The data stored in M29W400DB70ZE6E remains intact even when power is turned off.
• High capacity: It has a storage capacity of 4 megabits (512 kilobytes).
• Fast access time: The chip provides quick access to stored data, reducing latency.
• Reliable: M29W400DB70ZE6E offers high endurance and data retention capabilities.
• Low power consumption: It operates efficiently, consuming minimal power during read and write operations.

Package and Quantity

M29W400DB70ZE6E is available in a surface-mount package. The specific package type may vary depending on the manufacturer. It is typically sold in reels or trays containing multiple units.

Essence

The essence of M29W400DB70ZE6E lies in its ability to store and retrieve digital information reliably and efficiently.

Packaging/Quantity

The chip is usually packaged in an anti-static bag or tray to prevent damage from static electricity. The quantity per package varies depending on the manufacturer's specifications.

Specifications

• Memory Type: Flash
• Capacity: 4 Megabits (512 Kilobytes)
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Access Time: 70 nanoseconds
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of M29W400DB70ZE6E is as follows:

1. VCC: Power supply voltage
2. A0-A18: Address inputs
3. DQ0-DQ7: Data inputs/outputs
4. WE#: Write enable
5. CE#: Chip enable
6. OE#: Output enable
7. RP#/BYTE#: Reset/byte select
8. RY/BY#: Ready/busy
9. WP#/ACC: Write protect/Acceleration
10. VSS: Ground

Functional Features

• Erase and Program Operations: M29W400DB70ZE6E supports both sector erase and byte program operations, allowing flexible data manipulation.
• Block Locking: Certain sectors can be locked to prevent accidental erasure or modification of critical data.
• Status Register: The chip includes a status register that provides information about the device's current state and operation.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast access time
• Low power consumption
• Reliable data retention
• Flexible erase and program operations

Disadvantages

• Limited write endurance: Frequent write operations may reduce the lifespan of the chip.
• Higher cost compared to other memory technologies like DRAM or SRAM.

Working Principles

M29W400DB70ZE6E utilizes a floating-gate transistor technology to store digital information. It employs a combination of electrical charges to represent binary data (0s and 1s). The stored data can be accessed by applying appropriate voltage levels to the chip's pins.

Detailed Application Field Plans

M29W400DB70ZE6E finds applications in various electronic devices, including but not limited to: - Computers and laptops - Smartphones and tablets - Digital cameras - Gaming consoles - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models to M29W400DB70ZE6E include: - M29W400DT70N6E - M29W400DB70N6E - M29W400DT70N1E - M29W400DB70N1E

These models may have slightly different specifications or pin configurations but serve a similar purpose of flash memory storage.

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