M29W160ET7AZA6F TR

Product Overview

Category

M29W160ET7AZA6F TR belongs to the category of flash memory chips.

Use

It is commonly used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• Non-volatile memory: Retains data even when power is turned off.
• High storage capacity: The M29W160ET7AZA6F TR has a capacity of 16 megabits (2 megabytes).
• Fast read and write speeds: Allows for quick access to stored data.
• Low power consumption: Optimized for energy efficiency.
• Durable design: Resistant to shocks, vibrations, and extreme temperatures.

Package

The M29W160ET7AZA6F TR is available in a compact surface-mount package.

Essence

This flash memory chip provides reliable and high-performance data storage solutions for electronic devices.

Packaging/Quantity

The M29W160ET7AZA6F TR is typically packaged in reels or trays, with each reel or tray containing a specific quantity of chips. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Flash
• Capacity: 16 megabits (2 megabytes)
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 20 years
• Endurance: Up to 100,000 program/erase cycles

Detailed Pin Configuration

The M29W160ET7AZA6F TR features a specific pin configuration that enables its proper functioning within a circuit. The detailed pin configuration is as follows:

1. VCC: Power supply voltage
2. A0-A18: Address inputs
3. DQ0-DQ15: Data input/output lines
4. WE#: Write enable control signal
5. CE#: Chip enable control signal
6. OE#: Output enable control signal
7. RP#/BYTE#: Reset/byte enable control signal
8. RY/BY#: Ready/busy output status signal

Functional Features

• Fast Read and Write Operations: The M29W160ET7AZA6F TR offers high-speed read and write operations, allowing for efficient data access and storage.
• Block Erase Capability: It supports block erase operations, enabling the simultaneous erasure of multiple memory blocks.
• Hardware Data Protection: The chip incorporates hardware-based protection mechanisms to prevent accidental data corruption during power fluctuations or other disturbances.
• Software Security Features: It includes software security features such as password protection and lock bits to safeguard stored data from unauthorized access.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast read and write speeds
• Low power consumption
• Durable design
• Hardware and software data protection features

Disadvantages

• Limited endurance (up to 100,000 program/erase cycles)
• Relatively higher cost compared to other memory technologies

Working Principles

The M29W160ET7AZA6F TR utilizes a floating-gate transistor technology to store and retrieve data. It employs a combination of electrical charges to represent binary information (0s and 1s). When data is written, electrons are trapped in the floating gate, altering the transistor's behavior. During read operations, the presence or absence of charge in the floating gate determines the stored data value.

Detailed Application Field Plans

The M29W160ET7AZA6F TR can be applied in various electronic devices and systems that require reliable and high-capacity data storage. Some potential application fields include:

1. Smartphones and tablets
2. Digital cameras and camcorders
3. Portable media players
4. Automotive infotainment systems
5. Industrial control systems
6. Medical devices
7. Gaming consoles

Detailed and Complete Alternative Models

• M29W160EB7AN6F TR
• M29W160ET7AN6F TR
• M29W160FB7AN6F TR
• M29W160FT7AN6F TR
• M29W160GB7AN6F TR

These alternative models offer similar specifications and functionality to the M29W160ET7AZA6F TR, providing flexibility in choosing the most suitable flash memory chip for specific applications.

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