M29DW641F70N6F TR

Product Overview

Category

M29DW641F70N6F TR belongs to the category of flash memory devices.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• Non-volatile memory: The data stored in M29DW641F70N6F TR is retained even when power is turned off.
• High capacity: It offers a storage capacity of 64 megabits (8 megabytes).
• Fast access time: The device provides quick access to stored data, ensuring efficient performance.
• Reliable: M29DW641F70N6F TR is designed to withstand harsh environmental conditions and has a high endurance level.

Package

The M29DW641F70N6F TR flash memory device comes in a compact package that is compatible with surface mount technology (SMT). This package ensures easy integration into electronic circuit boards.

Essence

The essence of M29DW641F70N6F TR lies in its ability to provide reliable and high-capacity data storage for electronic devices.

Packaging/Quantity

The device is typically packaged in reels or trays, depending on the manufacturer's specifications. The quantity per package may vary, but it is commonly available in bulk quantities suitable for large-scale production.

Specifications

• Memory Type: Flash
• Capacity: 64 Megabits (8 Megabytes)
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Access Time: 70 ns
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP (Thin Small Outline Package)

Detailed Pin Configuration

The M29DW641F70N6F TR flash memory device has the following pin configuration:

1. VCC: Power supply voltage
2. A0-A18: Address inputs
3. DQ0-DQ7: Data input/output lines
4. WE#: Write enable control
5. CE#: Chip enable control
6. OE#: Output enable control
7. RP#: Ready/Busy status
8. RESET#: Reset control
9. WP#: Write protect control
10. BYTE#: Byte/word organization selection

Functional Features

• High-speed data transfer: M29DW641F70N6F TR supports fast read and write operations, enabling efficient data transfer.
• Erase and program capability: The device allows for erasing and programming of data, providing flexibility in managing stored information.
• Low power consumption: It is designed to minimize power consumption, making it suitable for battery-powered devices.
• Error correction: M29DW641F70N6F TR incorporates error correction techniques to ensure data integrity.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast access time
• Reliable performance
• Low power consumption
• Compact package size

Disadvantages

• Limited compatibility with certain older devices that do not support parallel interfaces
• Relatively higher cost compared to lower-capacity flash memory options

Working Principles

M29DW641F70N6F TR utilizes the principles of flash memory technology. It stores data by trapping electric charges within floating gate transistors. These charges represent binary information (0s and 1s). The stored data can be accessed and modified through specific electrical signals sent to the device's pins.

Detailed Application Field Plans

The M29DW641F70N6F TR flash memory device finds applications in various electronic devices, including but not limited to: - Smartphones and tablets - Digital cameras - Portable media players - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

1. M29DW641F70N6E TR
2. M29DW641F70N6G TR
3. M29DW641F70N6H TR
4. M29DW641F70N6I TR

These alternative models offer similar specifications and functionality to the M29DW641F70N6F TR flash memory device, providing options for different requirements and preferences.

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