MX29SL800CBXEC-90G

Product Overview

Category

MX29SL800CBXEC-90G belongs to the category of flash memory chips.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• High storage capacity: MX29SL800CBXEC-90G offers a storage capacity of 800 megabits (100 megabytes).
• Fast data transfer rate: It provides a high-speed data transfer rate, allowing for quick read and write operations.
• Low power consumption: This flash memory chip is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: The MX29SL800CBXEC-90G comes in a small form factor, enabling its integration into space-constrained devices.
• Durable and reliable: It offers robust data retention and endurance, ensuring data integrity over extended periods of use.

Packaging/Quantity

The MX29SL800CBXEC-90G is typically packaged in a surface-mount technology (SMT) package. It is available in reels or trays, with varying quantities depending on customer requirements.

Specifications

• Manufacturer: MXIC (Macronix International Co., Ltd.)
• Part Number: MX29SL800CBXEC-90G
• Memory Type: NOR Flash
• Memory Capacity: 800 megabits (100 megabytes)
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: 48-ball TFBGA (Thin Fine-Pitch Ball Grid Array)

Detailed Pin Configuration

The MX29SL800CBXEC-90G features a 48-ball TFBGA package with the following pin configuration:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. CE#
19. OE#
20. WE#
21. RY/BY#
22. RESET#
23. WP#
24. NC
25. DQ0
26. DQ1
27. DQ2
28. DQ3
29. DQ4
30. DQ5
31. DQ6
32. DQ7
33. DQ8
34. DQ9
35. DQ10
36. DQ11
37. DQ12
38. DQ13
39. DQ14
40. DQ15
41. VSS
42. VSS
43. VSS
44. VSS
45. VSS
46. VSS
47. VSS
48. VSS

Functional Features

• Random access: The MX29SL800CBXEC-90G allows for random access to any memory location, facilitating efficient data retrieval.
• Block erase: It supports block erase operations, enabling the erasure of large chunks of data simultaneously.
• Page programming: This flash memory chip allows for page programming, allowing data to be written in smaller increments.
• Write protection: MX29SL800CBXEC-90G features write protection functionality to prevent accidental modification or deletion of stored data.
• High reliability: It offers reliable data storage with built-in error correction mechanisms and wear-leveling algorithms.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Low power consumption
• Compact package
• Durable and reliable

Disadvantages

• Limited compatibility with certain devices due to the parallel interface
• Relatively higher cost compared to other memory technologies

Working Principles

The MX29SL800CBXEC-90G utilizes NOR flash memory technology. It stores data in a non-volatile manner, meaning the data remains intact even when power is removed. The chip consists of an array of memory cells that can be individually addressed for read or write operations. When data is written, it is stored by trapping electric charges within the memory cells. During read operations, the trapped charges are detected, allowing the retrieval of stored data.

Detailed Application Field Plans

The MX29SL800CBXEC-90G finds applications in various electronic devices, including but not limited to: - Smartphones and tablets - Digital cameras - Portable media players - Set-top boxes - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

• MX29GL800CBXEC