2N6403TG - Transistor Encyclopedia Entry

Product Overview

The 2N6403TG is a high-voltage, high-current NPN bipolar junction transistor (BJT) designed for general-purpose amplifier and switching applications. This transistor falls under the category of discrete semiconductor devices and is commonly used in various electronic circuits due to its versatile characteristics.

Basic Information Overview

• Category: Discrete Semiconductor Device
• Use: Amplification and Switching
• Characteristics: High Voltage, High Current
• Package: TO-220
• Essence: NPN Bipolar Junction Transistor
• Packaging/Quantity: Typically available in reels or tubes containing multiple units

Specifications

• Collector-Emitter Voltage (VCEO): 40V
• Collector-Base Voltage (VCBO): 60V
• Emitter-Base Voltage (VEBO): 6V
• Collector Current (IC): 10A
• Power Dissipation (PD): 50W
• Transition Frequency (fT): 3MHz
• Operating Temperature Range: -65°C to 150°C

Detailed Pin Configuration

The 2N6403TG transistor features a standard TO-220 package with three leads: 1. Collector (C): Connected to the positive supply voltage in typical circuit configurations. 2. Base (B): Controls the transistor's conductivity when a small current is applied. 3. Emitter (E): Connected to the ground or common reference point in most applications.

Functional Features

• High Voltage Capability: The 2N6403TG can withstand relatively high collector-emitter and collector-base voltages, making it suitable for high-voltage applications.
• High Current Handling: With a collector current rating of 10A, this transistor is capable of handling substantial current loads.
• Fast Switching Speed: The transition frequency of 3MHz enables rapid switching in amplification and switching circuits.

Advantages and Disadvantages

Advantages

• Versatile application in both amplification and switching circuits
• Robust construction for high-voltage and high-current operation
• Fast switching speed for efficient performance in various electronic systems

Disadvantages

• Relatively higher power dissipation compared to some low-power transistors
• May require appropriate heat sinking in high-power applications to manage thermal dissipation

Working Principles

The 2N6403TG operates based on the principles of bipolar junction transistors, where the flow of current between the collector and emitter is controlled by the base current. By modulating the base current, the transistor can amplify signals or act as a switch in electronic circuits.

Detailed Application Field Plans

The 2N6403TG finds extensive use in the following application fields: - Power Amplifiers - Motor Control Circuits - Voltage Regulators - Electronic Switching Systems - Audio Amplification

Detailed and Complete Alternative Models

For applications requiring similar specifications and performance, alternative models to the 2N6403TG include: - TIP31C - MJ15003 - MJE13005

In conclusion, the 2N6403TG transistor offers a robust solution for high-voltage, high-current amplification, and switching applications, making it a valuable component in various electronic systems.

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