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IXTP2R4N120P
Product Overview
- Category: Power MOSFET
- Use: High-power switching applications
- Characteristics: High voltage, high current capability, low on-resistance
- Package: TO-220AB
- Essence: Power MOSFET for high-power applications
- Packaging/Quantity: Standard packaging, quantity varies
Specifications
- Voltage Rating: 1200V
- Current Rating: 2.4A
- On-Resistance: 1.4Ω
- Operating Temperature: -55°C to 175°C
- Gate Charge: 40nC
- Package Type: TO-220AB
Detailed Pin Configuration
The IXTP2R4N120P follows the standard pin configuration for a TO-220AB package: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- High voltage capability
- Low on-resistance
- Fast switching speed
- Low gate charge
Advantages and Disadvantages
Advantages: - Suitable for high-power applications - Low conduction losses - Fast switching speed
Disadvantages: - Higher cost compared to lower power MOSFETs - Requires careful handling due to high voltage rating
Working Principles
The IXTP2R4N120P operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the device.
Detailed Application Field Plans
This power MOSFET is ideal for use in high-power applications such as: - Switch-mode power supplies - Motor drives - Inverters - Industrial equipment
Detailed and Complete Alternative Models
- IXTP2R4N120P's alternative models include:
- IXTP2R4N100P
- IXTP2R4N140P
- IXTP2R4N080P
This comprehensive entry provides an in-depth understanding of the IXTP2R4N120P, covering its specifications, features, application areas, and alternatives.
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10 domande e risposte comuni relative all'applicazione di IXTP2R4N120P nelle soluzioni tecniche
What is IXTP2R4N120P?
- IXTP2R4N120P is a high-power MOSFET designed for various technical solutions requiring efficient power management.
What are the key specifications of IXTP2R4N120P?
- The key specifications include a voltage rating of 1200V, a continuous drain current of 2.4A, and a low on-resistance for improved efficiency.
In what applications can IXTP2R4N120P be used?
- IXTP2R4N120P is commonly used in applications such as motor control, power supplies, renewable energy systems, and industrial automation.
What are the thermal characteristics of IXTP2R4N120P?
- The device features low thermal resistance and is designed to operate at high temperatures, making it suitable for demanding thermal environments.
How does IXTP2R4N120P contribute to energy efficiency?
- IXTP2R4N120P's low on-resistance and high voltage rating help minimize power losses, leading to improved energy efficiency in power management applications.
What protection features does IXTP2R4N120P offer?
- The MOSFET provides built-in protection against overcurrent, overvoltage, and overtemperature conditions, enhancing system reliability.
Can IXTP2R4N120P be used in automotive applications?
- Yes, IXTP2R4N120P is suitable for certain automotive applications where high-voltage and high-power requirements need to be met.
Does IXTP2R4N120P require any special gate driving considerations?
- It is recommended to follow the manufacturer's guidelines for gate driving to ensure optimal performance and reliability of the MOSFET.
Are there any application notes or reference designs available for IXTP2R4N120P?
- Yes, the manufacturer provides application notes and reference designs to assist engineers in implementing IXTP2R4N120P in their technical solutions.
Where can I find detailed technical documentation for IXTP2R4N120P?
- Detailed technical documentation, including datasheets and application guides, can be obtained from the manufacturer's website or authorized distributors.