IXYS
L'immagine può essere rappresentativa.
Vedi le specifiche per i dettagli del prodotto.
IXTA2R4N120P
vedi dettagli Schede tecniche

IXTA2R4N120P

Product Overview

Category

The IXTA2R4N120P belongs to the category of power MOSFETs.

Use

It is used for high-power switching applications in various electronic devices and systems.

Characteristics

  • High voltage and current handling capabilities
  • Low on-state resistance
  • Fast switching speed
  • Robust and reliable performance

Package

The IXTA2R4N120P is typically available in a TO-268 package, which provides efficient thermal dissipation and mechanical strength.

Essence

This MOSFET is essential for controlling and managing high-power electrical loads in diverse applications.

Packaging/Quantity

It is commonly supplied in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Voltage Rating: 1200V
  • Current Rating: 2.4A
  • On-State Resistance: 1.2 Ohms
  • Gate Threshold Voltage: 3V
  • Operating Temperature Range: -55°C to 175°C
  • Package Type: TO-268

Detailed Pin Configuration

The IXTA2R4N120P features a standard pin configuration with three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • High voltage blocking capability
  • Low conduction losses
  • Fast switching times
  • Enhanced thermal performance

Advantages

  • Suitable for high-power applications
  • Efficient energy conversion
  • Robust construction for reliability
  • Low on-state resistance minimizes power dissipation

Disadvantages

  • Higher cost compared to lower-rated MOSFETs
  • Requires careful consideration of drive circuitry due to high voltage rating

Working Principles

The IXTA2R4N120P operates based on the principles of field-effect transistors, utilizing its gate, drain, and source terminals to control the flow of current in high-power circuits.

Detailed Application Field Plans

The IXTA2R4N120P is widely used in: - Power supplies - Motor control systems - Renewable energy converters - Industrial automation equipment - Electric vehicle powertrains

Detailed and Complete Alternative Models

  1. IXFN38N100Q2 - 1000V, 38A, TO-268 package
  2. IRFP4668PBF - 200V, 130A, TO-247AC package
  3. STW45NM50FD - 500V, 45A, TO-247 package

In conclusion, the IXTA2R4N120P power MOSFET offers high-performance characteristics suitable for demanding high-power applications across various industries.

[Word Count: 366]

10 domande e risposte comuni relative all'applicazione di IXTA2R4N120P nelle soluzioni tecniche

  1. What is IXTA2R4N120P?

    • IXTA2R4N120P is a high-power insulated-gate bipolar transistor (IGBT) designed for use in various technical solutions requiring efficient power control.

  2. What are the key features of IXTA2R4N120P?

    • The key features of IXTA2R4N120P include a high current rating, low saturation voltage, and robust thermal performance, making it suitable for demanding applications.

  3. In what technical solutions can IXTA2R4N120P be used?

    • IXTA2R4N120P can be used in applications such as motor drives, renewable energy systems, industrial automation, and power supplies where high-power switching is required.

  4. What are the advantages of using IXTA2R4N120P in technical solutions?

    • The advantages of using IXTA2R4N120P include improved efficiency, reduced power losses, and enhanced reliability, leading to better overall system performance.

  5. How does IXTA2R4N120P compare to other similar components?

    • Compared to other similar components, IXTA2R4N120P offers higher current handling capabilities, lower conduction losses, and better thermal management, making it a preferred choice for high-power applications.

  6. What are the recommended operating conditions for IXTA2R4N120P?

    • The recommended operating conditions for IXTA2R4N120P typically include a specified voltage range, maximum current limits, and temperature constraints to ensure optimal performance and longevity.

  7. Are there any specific application notes or design considerations for using IXTA2R4N120P?

    • Yes, application notes and design considerations are available from the manufacturer to guide users in implementing IXTA2R4N120P effectively in their technical solutions, addressing issues such as gate driving and protection circuits.

  8. Can IXTA2R4N120P be used in parallel configurations for higher power applications?

    • Yes, IXTA2R4N120P can be used in parallel configurations to increase power handling capacity, but proper attention must be given to current sharing and thermal management to ensure balanced operation.

  9. What are the typical failure modes associated with IXTA2R4N120P and how can they be mitigated?

    • Typical failure modes may include overcurrent events, thermal overstress, and voltage spikes. These can be mitigated through appropriate protective measures such as current limiting, thermal monitoring, and snubber circuits.

  10. Where can I find detailed datasheets and application examples for IXTA2R4N120P?

    • Detailed datasheets and application examples for IXTA2R4N120P can be obtained from the manufacturer's website or by contacting their technical support team for comprehensive information and support.