IXYS
L'immagine può essere rappresentativa.
Vedi le specifiche per i dettagli del prodotto.
IXFN48N60P
vedi dettagli Schede tecniche

IXFN48N60P

Product Overview

Category

The IXFN48N60P belongs to the category of power MOSFETs.

Use

It is commonly used in power electronics applications such as motor drives, inverters, and power supplies.

Characteristics

  • High voltage capability
  • Low on-state resistance
  • Fast switching speed
  • High reliability

Package

The IXFN48N60P is typically available in a TO-264 package.

Essence

This MOSFET is essential for efficient power management and control in various electronic systems.

Packaging/Quantity

It is usually sold in reels or tubes containing a specific quantity, such as 50 pieces per tube.

Specifications

  • Voltage Rating: 600V
  • Current Rating: 48A
  • RDS(ON): 0.08 Ohms
  • Gate Threshold Voltage: 2.5V
  • Total Gate Charge: 70nC
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The IXFN48N60P typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • Low conduction losses
  • High efficiency
  • Enhanced thermal performance
  • Robustness against overcurrent and overvoltage conditions

Advantages and Disadvantages

Advantages

  • High voltage capability
  • Low on-state resistance
  • Fast switching speed
  • Reliable performance

Disadvantages

  • Higher cost compared to standard MOSFETs
  • Requires careful handling due to its sensitivity to electrostatic discharge

Working Principles

The IXFN48N60P operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

The IXFN48N60P is widely used in the following applications: - Motor drives for electric vehicles - Solar inverters - Uninterruptible power supplies (UPS) - Induction heating systems - Switched-mode power supplies (SMPS)

Detailed and Complete Alternative Models

Some alternative models to the IXFN48N60P include: - IRFP460: Similar voltage and current ratings - FDPF51N25: Lower voltage rating but suitable for certain applications - STW45NM50: Higher current rating with comparable characteristics

In conclusion, the IXFN48N60P power MOSFET offers high-performance characteristics suitable for demanding power electronics applications. Its robust design and efficient operation make it a preferred choice for various industries requiring reliable power management solutions.

Word Count: 346

10 domande e risposte comuni relative all'applicazione di IXFN48N60P nelle soluzioni tecniche

  1. What is the maximum voltage rating of IXFN48N60P?

    • The maximum voltage rating of IXFN48N60P is 600V.

  2. What is the maximum continuous drain current of IXFN48N60P?

    • The maximum continuous drain current of IXFN48N60P is 48A.

  3. What is the on-state resistance (RDS(on)) of IXFN48N60P?

    • The on-state resistance (RDS(on)) of IXFN48N60P is typically 0.08 ohms.

  4. What is the gate threshold voltage of IXFN48N60P?

    • The gate threshold voltage of IXFN48N60P is typically 4V.

  5. What are the typical applications for IXFN48N60P?

    • IXFN48N60P is commonly used in applications such as motor drives, inverters, and power supplies.

  6. What is the operating temperature range of IXFN48N60P?

    • The operating temperature range of IXFN48N60P is typically -55°C to 150°C.

  7. Does IXFN48N60P require a heat sink for operation?

    • Yes, IXFN48N60P may require a heat sink for efficient operation, especially at higher currents.

  8. What is the gate charge of IXFN48N60P?

    • The gate charge of IXFN48N60P is typically 100nC.

  9. Is IXFN48N60P suitable for high-frequency switching applications?

    • Yes, IXFN48N60P is suitable for high-frequency switching due to its low on-state resistance and fast switching characteristics.

  10. What are the key advantages of using IXFN48N60P in technical solutions?

    • The key advantages of using IXFN48N60P include its high voltage rating, low on-state resistance, and suitability for high-power applications.