IXFB100N50Q3

Introduction

The IXFB100N50Q3 is a power MOSFET belonging to the category of electronic components. It is widely used in various applications due to its unique characteristics and functional features. This entry provides an overview of the product, including its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

• Category: Power MOSFET
• Use: The IXFB100N50Q3 is used as a switching device in power electronics applications.
• Characteristics: It exhibits low on-state resistance, high current capability, and fast switching speed.
• Package: The MOSFET is typically available in a TO-220 package.
• Essence: It serves as a crucial component in power conversion and motor control circuits.
• Packaging/Quantity: The product is commonly packaged individually and sold in quantities suitable for various applications.

Specifications

The detailed specifications of the IXFB100N50Q3 include: - Maximum Drain-Source Voltage: 500V - Continuous Drain Current: 100A - On-State Resistance: 0.041 ohms - Gate-Source Threshold Voltage: 2.5V - Total Gate Charge: 150nC - Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IXFB100N50Q3 typically features a standard pin configuration with the following pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

• Low On-State Resistance: Enables efficient power transfer and minimizes power dissipation.
• High Current Capability: Allows the MOSFET to handle substantial current loads.
• Fast Switching Speed: Facilitates rapid switching transitions, suitable for high-frequency applications.

Advantages and Disadvantages

Advantages

• Efficient power transfer
• High current handling capability
• Fast switching speed

Disadvantages

• Sensitivity to voltage spikes
• Gate drive requirements may be more stringent compared to other devices

Working Principles

The IXFB100N50Q3 operates based on the principle of field-effect transistors, where the flow of current between the drain and source terminals is controlled by the voltage applied to the gate terminal. When the gate-source voltage exceeds the threshold, the MOSFET enters the conducting state, allowing current to flow through it.

Detailed Application Field Plans

The IXFB100N50Q3 finds extensive use in the following application fields: - Power supplies - Motor drives - Inverters - Switched-mode power supplies - Industrial automation

Detailed and Complete Alternative Models

Some alternative models to the IXFB100N50Q3 include: - IRFB7434PbF - FDPF33N25T - STP80NF55-06

In conclusion, the IXFB100N50Q3 power MOSFET offers significant advantages in power electronics applications, with its high current capability, low on-state resistance, and fast switching speed. Understanding its specifications, pin configuration, functional features, and application field plans is essential for effectively integrating this component into various electronic designs.

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