IS66WV25616BLL-55BLI-TR

Product Overview

Category

IS66WV25616BLL-55BLI-TR belongs to the category of semiconductor memory devices.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed operation
• Large storage capacity
• Low power consumption
• Compact package size
• Reliable performance

Package

IS66WV25616BLL-55BLI-TR is available in a small outline, thin profile (TSOP) package.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

IS66WV25616BLL-55BLI-TR is typically packaged in reels or trays, with a quantity of 2500 units per reel/tray.

Specifications

• Memory Type: Synchronous Static Random Access Memory (SRAM)
• Capacity: 256 megabits (32 megabytes)
• Operating Voltage: 3.3V
• Speed Grade: 55ns
• Interface: Parallel
• Organization: 32M words x 8 bits
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The IS66WV25616BLL-55BLI-TR has a total of 48 pins. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. A26
29. A27
30. A28
31. A29
32. A30
33. A31
34. DQ0
35. DQ1
36. DQ2
37. DQ3
38. DQ4
39. DQ5
40. DQ6
41. DQ7
42. WE#
43. OE#
44. CE#
45. UB#
46. LB#
47. CLK
48. GND

Functional Features

• Synchronous operation with a clock signal for precise data transfer
• Byte write and read capability for flexible data manipulation
• Burst mode for high-speed consecutive data access
• Automatic power-down mode for reduced power consumption during idle periods
• Built-in error detection and correction mechanisms for improved data integrity

Advantages and Disadvantages

Advantages

• High-speed operation enables fast data access and processing.
• Large storage capacity allows for the storage of extensive amounts of data.
• Low power consumption helps prolong battery life in portable devices.
• Compact package size facilitates integration into space-constrained designs.
• Reliable performance ensures consistent data storage and retrieval.

Disadvantages

• Relatively higher cost compared to other memory technologies.
• Limited endurance, as repeated write operations can degrade the memory cells over time.
• Volatile nature requires constant power supply to retain stored data.

Working Principles

IS66WV25616BLL-55BLI-TR utilizes static random access memory (SRAM) technology. It stores data in a matrix of memory cells, each consisting of flip-flops that can hold a single bit of information. The stored data is retained as long as power is supplied to the device.

The memory cells are organized in a specific configuration, allowing for efficient addressing and retrieval of data. The synchronous operation ensures that data is transferred in sync with an external clock signal, enabling precise timing and reliable data transfer.

Detailed Application Field Plans

IS66WV25616BLL-55BLI-TR finds applications in various electronic devices and systems, including: - Personal computers - Laptops and notebooks - Servers - Networking equipment - Mobile phones and smartphones - Automotive electronics - Industrial control systems - Medical devices - Consumer electronics

Detailed and Complete Alternative Models

Some alternative models to IS66WV25616BLL-55BLI-TR include: - IS66WV25616BLL-70BLI-TR: Similar specifications but with a higher speed grade of 70ns. - IS66WV25616BLL-45BLI-TR: Similar specifications but with a lower speed grade of 45ns. - IS66