IS65WV25616DBLL-45CTLA1

Product Overview

Category

IS65WV25616DBLL-45CTLA1 belongs to the category of semiconductor memory devices.

Use

It is primarily used as a high-speed, low-power synchronous static random-access memory (SRAM) device.

Characteristics

• High speed: The IS65WV25616DBLL-45CTLA1 offers fast access times, making it suitable for applications that require quick data retrieval.
• Low power consumption: This SRAM device is designed to operate efficiently with minimal power consumption, making it ideal for battery-powered devices.
• Synchronous operation: It operates synchronously with the system clock, allowing for precise timing and efficient data transfer.
• Large storage capacity: The IS65WV25616DBLL-45CTLA1 has a storage capacity of 256 megabits, providing ample space for data storage.

Package

The IS65WV25616DBLL-45CTLA1 is available in a Ball Grid Array (BGA) package.

Essence

The essence of IS65WV25616DBLL-45CTLA1 lies in its ability to provide high-speed, low-power memory storage for various electronic devices.

Packaging/Quantity

This product is typically packaged in reels or trays, with a quantity of [insert quantity].

Specifications

• Memory Type: Synchronous SRAM
• Organization: 32M words x 16 bits
• Supply Voltage: 2.5V - 3.3V
• Access Time: 45 ns
• Operating Temperature Range: -40°C to +85°C
• Package Type: BGA

Detailed Pin Configuration

The IS65WV25616DBLL-45CTLA1 has a total of [insert number] pins. The pin configuration is as follows:

1. [Pin 1]: [Description]
2. [Pin 2]: [Description]
3. [Pin 3]: [Description] ... ...

Functional Features

• High-speed data access: The IS65WV25616DBLL-45CTLA1 offers fast read and write operations, enabling efficient data processing.
• Low-power standby mode: It has a low-power standby mode, reducing power consumption when not in use.
• Burst mode operation: This SRAM device supports burst mode, allowing for consecutive data transfers without the need for repeated address inputs.

Advantages and Disadvantages

Advantages

• High-speed operation enables quick data retrieval.
• Low-power consumption makes it suitable for battery-powered devices.
• Large storage capacity provides ample space for data storage.
• Synchronous operation ensures precise timing and efficient data transfer.

Disadvantages

• Relatively higher cost compared to other memory technologies.
• Limited availability of alternative models.

Working Principles

The IS65WV25616DBLL-45CTLA1 operates based on the principles of synchronous static random-access memory (SRAM). It stores data in a volatile manner, meaning that the stored information is lost when power is removed. The synchronous operation allows for synchronized data transfer with the system clock, ensuring accurate timing and reliable data communication.

Detailed Application Field Plans

The IS65WV25616DBLL-45CTLA1 finds applications in various electronic devices, including but not limited to: - Networking equipment - Telecommunications systems - Industrial automation - Automotive electronics - Consumer electronics

Detailed and Complete Alternative Models

While the IS65WV25616DBLL-45CTLA1 is a highly capable SRAM device, there are alternative models available in the market that offer similar functionalities. Some notable alternatives include: - [Alternative Model 1]: [Description] - [Alternative Model 2]: [Description] - [Alternative Model 3]: [Description]

Please note that the availability and specifications of alternative models may vary.

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