IS61QDP2B41M18A-400M3L

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics:
  • High-speed operation
  • Low power consumption
  • Large storage capacity
• Package: BGA (Ball Grid Array)
• Essence: Dynamic Random Access Memory (DRAM)
• Packaging/Quantity: Tray packaging, quantity varies

Specifications

• Model: IS61QDP2B41M18A-400M3L
• Technology: DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory)
• Capacity: 8 Gigabits (1 Gigabyte)
• Speed: 400 Megahertz
• Voltage: 1.2 Volts
• Organization: 256M words x 16 bits
• Operating Temperature: -40°C to +85°C

Detailed Pin Configuration

The IS61QDP2B41M18A-400M3L has a total of 96 pins arranged in a specific configuration. The pinout diagram is as follows:

```

Pin Name Description

1 VDD Power supply 2 VSS Ground 3 DQ0 Data input/output bit 0 4 DQ1 Data input/output bit 1 5 DQ2 Data input/output bit 2 ... 96 NC No connection ```

Functional Features

• High-speed data transfer with DDR4 technology
• Low power consumption for energy efficiency
• Large storage capacity for storing vast amounts of data
• Reliable and stable performance
• Support for advanced memory features like ECC (Error-Correcting Code)

Advantages

• Faster data access and transfer speeds compared to previous generations
• Lower power consumption leads to reduced energy costs
• Increased memory capacity allows for more data-intensive applications
• Improved reliability and error correction capabilities enhance system stability

Disadvantages

• Higher cost compared to older memory technologies
• Requires compatible hardware and software support for optimal performance
• Limited compatibility with older systems that do not support DDR4

Working Principles

The IS61QDP2B41M18A-400M3L operates based on the principles of DDR4 SDRAM. It utilizes a synchronous interface and transfers data on both the rising and falling edges of the clock signal, effectively doubling the data transfer rate compared to single-data-rate memories. The memory cells store data in capacitors, which need to be periodically refreshed to maintain the stored information.

Detailed Application Field Plans

The IS61QDP2B41M18A-400M3L is commonly used in various electronic devices and systems, including: - Personal computers - Servers - Networking equipment - High-performance computing systems - Embedded systems - Consumer electronics

Detailed and Complete Alternative Models

• IS61QDP2B41M18A-266M3L: DDR4 SDRAM with a speed of 266 Megahertz
• IS61QDP2B41M18A-533M3L: DDR4 SDRAM with a speed of 533 Megahertz
• IS61QDP2B41M18A-800M3L: DDR4 SDRAM with a speed of 800 Megahertz
• IS61QDP2B41M18A-1200M3L: DDR4 SDRAM with a speed of 1200 Megahertz

Note: There are several alternative models available with different speeds to cater to specific requirements.

Word count: 346 words