IS42S32400B-7BLI

Product Overview

Category

IS42S32400B-7BLI belongs to the category of dynamic random access memory (DRAM) chips.

Use

This product is primarily used in electronic devices such as computers, smartphones, and tablets for storing and accessing data quickly.

Characteristics

• High-speed data storage and retrieval capabilities
• Low power consumption
• Compact size
• Compatibility with various electronic devices

Package

IS42S32400B-7BLI is available in a small outline dual in-line memory module (SODIMM) package.

Essence

The essence of IS42S32400B-7BLI lies in its ability to provide fast and efficient data storage and retrieval, enhancing the overall performance of electronic devices.

Packaging/Quantity

IS42S32400B-7BLI is typically packaged individually and is available in varying quantities depending on the manufacturer's specifications.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Capacity: 256 Megabits (32 Megabytes)
• Organization: 4 banks x 4,194,304 words x 16 bits
• Operating Voltage: 3.3V
• Clock Frequency: 143 MHz
• Access Time: 7 ns
• Interface: Parallel

Detailed Pin Configuration

The pin configuration of IS42S32400B-7BLI is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. /CAS
37. /RAS
38. /WE
39. /CS0
40. /CS1
41. /CS2
42. /CS3
43. /CKE
44. /CLK
45. VDD
46. VSS

Functional Features

• High-speed data transfer rate
• Burst mode operation for efficient data access
• Auto-refresh and self-refresh modes for power-saving
• On-die termination (ODT) for improved signal integrity
• Programmable burst length and latency settings

Advantages and Disadvantages

Advantages

• Fast data storage and retrieval capabilities
• Low power consumption
• Compact size for easy integration into electronic devices
• Compatibility with various electronic devices

Disadvantages

• Limited capacity compared to other memory technologies
• Relatively higher cost per unit compared to other memory technologies

Working Principles

IS42S32400B-7BLI operates based on the principles of synchronous dynamic random access memory (SDRAM). It stores data in a matrix of capacitors, which are organized into rows and columns. The data is accessed by sending row and column addresses along with control signals to select the desired memory location. The stored data can be read or written by applying appropriate voltage levels to the corresponding pins.

Detailed Application Field Plans

IS42S32400B-7BLI finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Mobile phones - Tablets - Gaming consoles

Detailed and Complete Alternative Models

Some alternative models to IS42S32400B-7BLI include: - MT48LC32M16A2P-75: Micron Technology Inc. - K4S561632H-UC75: Samsung Electronics Co., Ltd. - HYB39S256160FE-7: Infineon Technologies AG - AS4C32M16SB-7TCN: Alliance Memory Inc.

These alternative models offer similar specifications and functionalities, providing options for different manufacturers and system requirements.

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