IS34ML01G084-BLI

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Memory storage
• Characteristics: High capacity, low power consumption
• Package: Ball Grid Array (BGA)
• Essence: Non-volatile memory chip
• Packaging/Quantity: Individually packaged, quantity varies

Specifications

• Capacity: 1 Gigabit (1 Gb)
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Retention: Up to 20 years
• Erase/Program Cycles: Up to 100,000 cycles

Detailed Pin Configuration

The IS34ML01G084-BLI has a total of 8 pins arranged as follows:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VCC | Power supply voltage | | 2 | GND | Ground | | 3 | CS | Chip select | | 4 | SCK | Serial clock input | | 5 | SI | Serial data input | | 6 | SO | Serial data output | | 7 | WP | Write protect | | 8 | HOLD | Hold input |

Functional Features

• Non-volatile storage: Retains data even when power is disconnected
• High-speed data transfer: SPI interface allows for fast communication
• Low power consumption: Ideal for battery-powered devices
• Sector-based erasing: Allows selective erasure of specific memory areas
• Write protection: Prevents accidental modification of stored data
• Hardware and software write protection options

Advantages

• Large storage capacity for data-intensive applications
• Fast data transfer speeds enhance overall system performance
• Low power consumption extends battery life in portable devices
• Sector-based erasing provides flexibility in managing data
• Write protection options ensure data integrity and security

Disadvantages

• Relatively higher cost compared to traditional memory technologies
• Limited endurance due to erase/program cycle limitations
• Requires specific programming protocols for proper operation
• Sensitive to electrostatic discharge (ESD) during handling

Working Principles

The IS34ML01G084-BLI is based on Flash memory technology. It utilizes a floating gate transistor structure to store data. When data is written, electrons are trapped in the floating gate, altering the transistor's threshold voltage. This change in voltage represents the stored data. During read operations, the threshold voltage is measured to determine the stored information.

Detailed Application Field Plans

The IS34ML01G084-BLI is widely used in various electronic devices that require non-volatile storage, such as: - Consumer electronics: Smartphones, tablets, digital cameras - Automotive systems: Infotainment systems, navigation units - Industrial equipment: Data loggers, control systems - Medical devices: Patient monitoring systems, diagnostic equipment - IoT devices: Smart home appliances, wearable devices

Detailed and Complete Alternative Models

• IS34ML02G084-BLI: 2 Gigabit capacity variant
• IS34ML04G084-BLI: 4 Gigabit capacity variant
• IS34ML08G084-BLI: 8 Gigabit capacity variant
• IS34ML16G084-BLI: 16 Gigabit capacity variant

Note: The above alternative models share similar specifications and features with the IS34ML01G084-BLI but differ in capacity.

This entry provides an overview of the IS34ML01G084-BLI, a memory storage IC. It includes basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.