X1226S8T2

Product Overview

Category: Integrated Circuit (IC)

Use: X1226S8T2 is a non-volatile static RAM (NVSRAM) integrated circuit. It combines the features of both SRAM and EEPROM, providing non-volatile storage with high-speed read/write operations.

Characteristics: - Non-volatile storage - High-speed read/write operations - Low power consumption - Small form factor - Wide operating voltage range

Package: X1226S8T2 is available in an 8-pin SOIC (Small Outline Integrated Circuit) package.

Essence: The essence of X1226S8T2 lies in its ability to retain data even when power is removed, making it suitable for applications that require non-volatile memory.

Packaging/Quantity: X1226S8T2 is typically sold in reels or tubes, with a quantity of 2500 units per reel/tube.

Specifications

• Supply Voltage Range: 2.7V to 5.5V
• Operating Temperature Range: -40°C to +85°C
• Memory Size: 256Kb (32K x 8 bits)
• Data Retention: 100 years
• Write Endurance: 1 million cycles
• Standby Current: 1µA (typical)
• Active Current: 3mA (typical)

Detailed Pin Configuration

The X1226S8T2 IC has the following pin configuration:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VCC | Power supply voltage input | | 2 | GND | Ground reference | | 3 | SDA | Serial Data Input/Output | | 4 | SCL | Serial Clock Input | | 5 | WP | Write Protect Input | | 6 | VBAT | Battery Backup Input | | 7 | NC | No Connection | | 8 | NC | No Connection |

Functional Features

• Non-volatile storage: X1226S8T2 retains data even when power is removed, ensuring data integrity.
• High-speed read/write operations: The IC provides fast access to stored data, enabling efficient data retrieval and updates.
• Low power consumption: X1226S8T2 operates with low power consumption, making it suitable for battery-powered devices.
• Small form factor: The compact size of the IC allows for easy integration into various electronic systems.
• Wide operating voltage range: X1226S8T2 can operate within a wide voltage range, providing flexibility in different applications.

Advantages and Disadvantages

Advantages: - Non-volatile storage ensures data retention - High-speed read/write operations for efficient data handling - Low power consumption extends battery life - Compact size allows for easy integration - Wide operating voltage range provides versatility

Disadvantages: - Limited memory size (256Kb) - Relatively higher cost compared to traditional SRAM

Working Principles

X1226S8T2 combines the functionality of static RAM (SRAM) and electrically erasable programmable read-only memory (EEPROM). It utilizes a floating gate transistor technology to store charge, allowing data to be retained even without power. The IC uses a serial interface (SDA and SCL) for communication and supports both random access and sequential access modes.

Detailed Application Field Plans

X1226S8T2 finds applications in various fields, including but not limited to: 1. Industrial automation systems 2. Automotive electronics 3. Medical devices 4. Consumer electronics 5. Smart meters 6. Security systems

Detailed and Complete Alternative Models

1. X1226S8T1: Similar to X1226S8T2, but with a different package (SOIC-16).
2. X1226S8T3: Higher memory size variant (512Kb) of X1226S8T2.
3. X1226S8T4: Lower power consumption variant of X1226S8T2.

These alternative models offer similar functionality with slight variations in package, memory size, or power consumption.

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