PTFA142401ELV4R250XTMA1

Introduction

The PTFA142401ELV4R250XTMA1 is a high-performance electronic component designed for use in the telecommunications industry. This entry provides an overview of its product category, basic information, specifications, detailed pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.

Product Category

The PTFA142401ELV4R250XTMA1 belongs to the category of RF power transistors, specifically designed for high-frequency applications in the telecommunications sector.

Basic Information Overview

• Use: The primary use of PTFA142401ELV4R250XTMA1 is in amplifying radio frequency signals in telecommunications equipment.
• Characteristics: It exhibits high power gain, efficiency, and linearity, making it suitable for demanding RF amplification requirements.
• Package: The component is housed in a compact and thermally efficient package, ensuring reliable performance in various operating conditions.
• Essence: Its essence lies in providing high-power amplification while maintaining signal integrity and minimizing distortion.
• Packaging/Quantity: The PTFA142401ELV4R250XTMA1 is typically supplied in tape and reel packaging, with quantities tailored to meet production needs.

Specifications

• Frequency Range: 1.8 GHz to 2.2 GHz
• Power Output: 250 Watts
• Voltage Rating: 50 Volts
• Gain: 14 dB
• Efficiency: 70%
• Operating Temperature: -40°C to 150°C
• Package Type: Surface Mount

Detailed Pin Configuration

The PTFA142401ELV4R250XTMA1 features a 4-pin configuration: 1. RF Input 2. RF Output 3. DC Bias 4. Ground

Functional Features

• High Power Gain: Provides significant amplification for RF signals.
• Broad Frequency Range: Suitable for diverse telecommunications applications.
• High Efficiency: Minimizes power dissipation and heat generation.
• Robust Thermal Performance: Ensures reliable operation under varying thermal conditions.

Advantages and Disadvantages

Advantages

• High power output capability
• Excellent linearity for signal fidelity
• Compact form factor for space-constrained designs
• Wide operating temperature range

Disadvantages

• Higher cost compared to lower-power alternatives
• Requires careful thermal management in high-power applications

Working Principles

The PTFA142401ELV4R250XTMA1 operates on the principle of amplifying RF signals using advanced semiconductor technology. When biased and driven by an input signal, it efficiently amplifies the signal while maintaining linearity and minimizing distortion.

Detailed Application Field Plans

The PTFA142401ELV4R250XTMA1 finds extensive application in: - Base station amplifiers - Radar systems - Microwave links - Satellite communications

Detailed and Complete Alternative Models

• PTFA142401ELV4R100XTMA1: Lower power variant for cost-sensitive applications
• PTFA142401ELV4R500XTMA1: Higher power variant for more demanding RF amplification needs
• PTFA142401ELV4R200XTMA1: Mid-range power variant offering a balance between cost and performance

In conclusion, the PTFA142401ELV4R250XTMA1 stands as a versatile and high-performance RF power transistor catering to the stringent demands of modern telecommunications infrastructure.

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