L'immagine può essere rappresentativa.
Vedi le specifiche per i dettagli del prodotto.
IRFB61N15DPBF

IRFB61N15DPBF

Product Overview

Category: Power MOSFET
Use: Switching applications in power supplies, converters, motor control, and other high-current applications
Characteristics: High voltage, low on-resistance, fast switching speed
Package: TO-220AB
Essence: Power MOSFET for high-current switching applications
Packaging/Quantity: Available in reels or tubes, quantity varies

Specifications

  • Voltage Rating: 150V
  • Continuous Drain Current: 61A
  • RDS(ON): 0.036Ω
  • Gate Threshold Voltage: 2V - 4V
  • Power Dissipation: 200W
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IRFB61N15DPBF features a standard TO-220AB pin configuration with three pins: gate (G), drain (D), and source (S).

Functional Features

  • Low on-resistance for minimal power loss
  • Fast switching speed for efficient operation
  • High voltage rating for versatile applications
  • Robust construction for reliability in high-current environments

Advantages and Disadvantages

Advantages: - High voltage rating - Low on-resistance - Fast switching speed

Disadvantages: - Higher power dissipation compared to some alternative models - Larger package size may not be suitable for space-constrained designs

Working Principles

The IRFB61N15DPBF operates based on the principles of field-effect transistors, utilizing its gate, drain, and source terminals to control the flow of current in high-power applications.

Detailed Application Field Plans

This power MOSFET is well-suited for use in various applications, including: - Power supplies - Converters - Motor control systems - High-current switching circuits

Detailed and Complete Alternative Models

  1. IRFB61N17PBF: Similar specifications with a higher voltage rating
  2. IRFB61N20DPBF: Higher voltage and current ratings for more demanding applications
  3. IRFB61N15PBF: Lower on-resistance for improved efficiency in certain scenarios

Note: The above list is not exhaustive and there are numerous alternative models available from different manufacturers.


This comprehensive entry provides an in-depth understanding of the IRFB61N15DPBF, covering its specifications, functional features, advantages, disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.

10 domande e risposte comuni relative all'applicazione di IRFB61N15DPBF nelle soluzioni tecniche

  1. What is the maximum drain-source voltage of IRFB61N15DPBF?

    • The maximum drain-source voltage of IRFB61N15DPBF is 150V.
  2. What is the continuous drain current rating of IRFB61N15DPBF?

    • The continuous drain current rating of IRFB61N15DPBF is 61A.
  3. What is the on-state resistance (RDS(on)) of IRFB61N15DPBF?

    • The on-state resistance (RDS(on)) of IRFB61N15DPBF is typically 0.036 ohms.
  4. What is the gate threshold voltage of IRFB61N15DPBF?

    • The gate threshold voltage of IRFB61N15DPBF typically ranges from 2V to 4V.
  5. Can IRFB61N15DPBF be used in high-power applications?

    • Yes, IRFB61N15DPBF is suitable for high-power applications due to its high drain-source voltage and current ratings.
  6. What are the typical applications of IRFB61N15DPBF?

    • IRFB61N15DPBF is commonly used in motor control, power supplies, and inverters.
  7. Does IRFB61N15DPBF require a heatsink for proper operation?

    • Yes, IRFB61N15DPBF may require a heatsink to dissipate heat effectively, especially in high-power applications.
  8. Is IRFB61N15DPBF suitable for switching applications?

    • Yes, IRFB61N15DPBF is designed for efficient switching applications due to its low on-state resistance and fast switching characteristics.
  9. What is the operating temperature range of IRFB61N15DPBF?

    • IRFB61N15DPBF has an operating temperature range typically from -55°C to 175°C.
  10. Are there any recommended driver ICs for IRFB61N15DPBF?

    • Yes, various MOSFET driver ICs are compatible with IRFB61N15DPBF, such as those designed for high-power applications and gate driving requirements.