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IDH08S120AKSA1
Product Overview
Category
The IDH08S120AKSA1 belongs to the category of high-power insulated gate bipolar transistors (IGBTs).
Use
It is commonly used in high-power applications such as motor drives, power supplies, and renewable energy systems.
Characteristics
- High power handling capability
- Insulated gate for improved control
- Low on-state voltage drop
- High current-carrying capability
Package
The IDH08S120AKSA1 is typically available in a TO-220 package.
Essence
This IGBT is essential for controlling high-power electrical circuits with efficiency and reliability.
Packaging/Quantity
It is usually packaged individually and sold in quantities suitable for industrial applications.
Specifications
- Voltage Rating: 1200V
- Current Rating: 80A
- Maximum Operating Temperature: 150°C
- Gate-Emitter Voltage: ±20V
Detailed Pin Configuration
The IDH08S120AKSA1 has a standard TO-220 pin configuration: 1. Collector 2. Gate 3. Emitter
Functional Features
- Fast switching speed
- Low saturation voltage
- High input impedance
- Overcurrent and overtemperature protection
Advantages and Disadvantages
Advantages
- High power handling capability
- Efficient switching performance
- Reliable overcurrent and overtemperature protection
Disadvantages
- Higher cost compared to standard power transistors
- Requires careful thermal management due to high power dissipation
Working Principles
The IDH08S120AKSA1 operates based on the principles of insulated gate bipolar transistors, utilizing its insulated gate to control the flow of high-power currents with minimal losses.
Detailed Application Field Plans
Motor Drives
The IGBT can be used in variable frequency drives for controlling the speed and torque of electric motors in industrial and automotive applications.
Power Supplies
It is suitable for use in high-power switch-mode power supplies for efficient conversion of electrical energy.
Renewable Energy Systems
In solar inverters and wind turbine converters, the IGBT facilitates the efficient conversion and control of renewable energy sources.
Detailed and Complete Alternative Models
- IDH06S120AKSA1: 600V, 80A IGBT
- IDH10S120AKSA1: 1000V, 80A IGBT
- IDH08S140AKSA1: 1200V, 80A IGBT with higher voltage rating
In conclusion, the IDH08S120AKSA1 is a high-power IGBT with versatile applications in various industries, offering efficient control and reliable performance in demanding environments.
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10 domande e risposte comuni relative all'applicazione di IDH08S120AKSA1 nelle soluzioni tecniche
Sure, here are 10 common questions and answers related to the application of IDH08S120AKSA1 in technical solutions:
What is the maximum voltage rating for IDH08S120AKSA1?
- The maximum voltage rating for IDH08S120AKSA1 is 1200V.
What is the maximum current rating for IDH08S120AKSA1?
- The maximum current rating for IDH08S120AKSA1 is 8A.
What type of package does IDH08S120AKSA1 come in?
- IDH08S120AKSA1 comes in a TO-220 package.
What are the typical applications for IDH08S120AKSA1?
- IDH08S120AKSA1 is commonly used in motor control, power supplies, and inverters.
What is the on-state voltage drop for IDH08S120AKSA1?
- The on-state voltage drop for IDH08S120AKSA1 is typically around 1.7V.
Does IDH08S120AKSA1 have built-in protection features?
- Yes, IDH08S120AKSA1 has built-in overcurrent and overtemperature protection.
What is the operating temperature range for IDH08S120AKSA1?
- The operating temperature range for IDH08S120AKSA1 is -40°C to 150°C.
Is IDH08S120AKSA1 suitable for high-frequency switching applications?
- Yes, IDH08S120AKSA1 is suitable for high-frequency switching due to its fast turn-off capability.
Can IDH08S120AKSA1 be used in parallel configurations for higher current handling?
- Yes, IDH08S120AKSA1 can be used in parallel configurations to increase current handling capacity.
What are the key advantages of using IDH08S120AKSA1 in technical solutions?
- The key advantages of using IDH08S120AKSA1 include low on-state voltage drop, high current rating, and robust protection features for reliable performance in various applications.