S29GL256S90DHI020

Product Overview

Category

The S29GL256S90DHI020 belongs to the category of flash memory devices.

Use

It is primarily used for data storage in various electronic devices, such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The S29GL256S90DHI020 offers a storage capacity of 256 gigabits (32 gigabytes).
• High-speed data transfer: It supports fast read and write operations, allowing for quick access to stored data.
• Reliable performance: This flash memory device ensures data integrity and durability through advanced error correction techniques.
• Low power consumption: It is designed to operate efficiently with minimal power requirements.
• Wide temperature range: The S29GL256S90DHI020 can function reliably across a broad temperature range, making it suitable for various environments.

Package

The S29GL256S90DHI020 is available in a compact and industry-standard package, which facilitates easy integration into electronic devices.

Essence

This flash memory device provides a high-capacity and reliable solution for storing and accessing data in electronic devices.

Packaging/Quantity

The S29GL256S90DHI020 is typically packaged individually or in reels, depending on the manufacturer's specifications. The quantity per package may vary, but commonly ranges from 1 to 100 units.

Specifications

• Memory Type: Flash
• Capacity: 256 gigabits (32 gigabytes)
• Interface: Parallel
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 20 years
• Endurance: Up to 100,000 program/erase cycles

Detailed Pin Configuration

The S29GL256S90DHI020 follows a specific pin configuration, which is as follows:

1. VCC: Power supply voltage
2. A0-A18: Address inputs
3. DQ0-DQ15: Data input/output lines
4. WE#: Write enable control
5. CE#: Chip enable control
6. OE#: Output enable control
7. RP#/BYTE#: Reset/byte enable control
8. RY/BY#: Ready/busy status output
9. WP#/ACC: Write protect/control input
10. VSS: Ground

Functional Features

• High-speed read and write operations: The S29GL256S90DHI020 offers fast data transfer rates, enabling quick access to stored information.
• Error correction capabilities: Advanced error correction techniques ensure data integrity and reliability.
• Block erase and sector erase functions: This flash memory device allows for efficient erasure of specific blocks or sectors, facilitating flexible data management.
• Low power consumption: It operates with low power requirements, making it suitable for battery-powered devices.
• Versatile interface: The parallel interface enables easy integration into various electronic systems.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast data transfer rates
• Reliable performance
• Wide temperature range operation
• Efficient power consumption

Disadvantages

• Parallel interface may limit compatibility with newer systems that primarily use serial interfaces.
• Higher cost compared to lower-capacity flash memory options.

Working Principles

The S29GL256S90DHI020 utilizes the principles of flash memory technology. It stores data in memory cells by trapping electric charges within floating gate transistors. These charges represent binary values (0s and 1s), allowing for non-volatile data storage even when power is removed. The data can be read, written, and erased using specific electrical signals applied to the device's pins.

Detailed Application Field Plans

The S29GL256S90DHI020 is widely used in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

1. S29GL128S90DHI010: 128 gigabit (16 gigabyte) flash memory device with similar characteristics and features.
2. S29GL512S90DHI030: 512 gigabit (64 gigabyte) flash memory device with higher storage capacity but similar specifications.
3. S29GL064S90DHI040: 64 gigabit (8 gigabyte) flash memory device with lower storage capacity but similar performance.

These alternative models provide options with varying storage capacities to suit different application requirements.

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