S29GL128N11TFI020

Product Overview

Category

S29GL128N11TFI020 belongs to the category of flash memory devices.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• Non-volatile: The stored data is retained even when power is turned off.
• High capacity: S29GL128N11TFI020 has a storage capacity of 128 gigabits (16 gigabytes).
• Fast access time: It offers quick read and write operations, allowing for efficient data transfer.
• Reliable: The device is designed to withstand harsh environmental conditions and has a high endurance rating.

Package

S29GL128N11TFI020 comes in a compact package that is compatible with standard surface mount technology (SMT) assembly processes.

Essence

The essence of S29GL128N11TFI020 lies in its ability to provide reliable and high-capacity data storage in a compact form factor.

Packaging/Quantity

The device is typically packaged in reels or trays, with each reel or tray containing a specific quantity of S29GL128N11TFI020 units. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Flash
• Capacity: 128 gigabits (16 gigabytes)
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP (Thin Small Outline Package)

Detailed Pin Configuration

The pin configuration of S29GL128N11TFI020 is as follows:

1. VCC: Power supply voltage
2. A0-A23: Address inputs
3. DQ0-DQ15: Data input/output
4. WE#: Write enable
5. CE#: Chip enable
6. OE#: Output enable
7. RP#: Ready/Busy status
8. RY/BY#: Read/Busy status
9. RESET#: Reset input

Functional Features

• High-speed data transfer: S29GL128N11TFI020 offers fast read and write operations, enabling quick access to stored data.
• Error correction: The device incorporates error correction techniques to ensure data integrity.
• Block erase capability: It supports block erase operations, allowing for efficient management of data storage.
• Low power consumption: S29GL128N11TFI020 is designed to minimize power consumption, making it suitable for battery-powered devices.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast access time
• Reliable performance
• Compact form factor
• Low power consumption

Disadvantages

• Higher cost compared to lower-capacity flash memory devices
• Limited compatibility with certain older systems that do not support parallel interfaces

Working Principles

S29GL128N11TFI020 utilizes the principles of flash memory technology. It stores data by trapping electric charges in floating gate transistors. These charges represent binary information (0s and 1s) and can be electrically programmed or erased as needed.

Detailed Application Field Plans

S29GL128N11TFI020 finds applications in various electronic devices, including: - Smartphones and tablets - Digital cameras - Portable media players - Solid-state drives (SSDs) - Industrial control systems - Automotive electronics

Detailed and Complete Alternative Models

Some alternative models to S29GL128N11TFI020 include: - S29GL064N11TFI010: 64 gigabit (8 gigabyte) flash memory device with similar characteristics and specifications. - S29GL256N11TFI020: 256 gigabit (32 gigabyte) flash memory device with higher storage capacity. - S29GL128N10TFI010: 128 gigabit (16 gigabyte) flash memory device with slightly different specifications.

These alternative models offer different capacities and may have variations in features and performance characteristics.

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