S29AL016J55BFNR10

Basic Information Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-speed read and write operations
  • Low power consumption
  • Large storage capacity
• Package: BGA (Ball Grid Array)
• Essence: Reliable and efficient data storage solution
• Packaging/Quantity: Available in reels, quantity varies based on customer requirements

Specifications

• Manufacturer: Cypress Semiconductor
• Memory Type: NOR Flash
• Density: 16 Megabits (2 Megabytes)
• Organization: 2 M x 8 bits
• Voltage Range: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Speed: 55 ns (Read), 55 ns (Program), 55 ns (Erase)

Detailed Pin Configuration

The S29AL016J55BFNR10 has a total of 48 pins. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. BYTE#
27. WE#
28. CE#
29. OE#
30. RY/BY#
31. DQ0
32. DQ1
33. DQ2
34. DQ3
35. DQ4
36. DQ5
37. DQ6
38. DQ7
39. VSS
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. NC

Functional Features

• High-speed read and write operations enable fast data access.
• Non-volatile memory retains data even when power is disconnected.
• Low power consumption makes it suitable for battery-powered devices.
• Large storage capacity allows for storing a significant amount of data.

Advantages

• Reliable and durable data storage solution.
• Fast read and write operations enhance overall system performance.
• Low power consumption prolongs battery life in portable devices.
• Wide operating temperature range enables usage in various environments.

Disadvantages

• Limited storage capacity compared to higher-density flash memory options.
• Higher cost per megabyte compared to some other memory technologies.
• BGA package may require specialized equipment for installation or replacement.

Working Principles

The S29AL016J55BFNR10 utilizes NOR flash memory technology. It stores data by trapping electrons in a floating gate, which can be electrically programmed and erased. When reading data, the stored charge is detected, allowing retrieval of the information. The device operates based on a combination of address lines, control signals, and data lines to perform read, write, and erase operations.

Detailed Application Field Plans

The S29AL016J55BFNR10 is widely used in various electronic devices that require non-volatile data storage. Some common application fields include: - Consumer electronics (e.g., smartphones, tablets, digital cameras) - Automotive systems (e.g., infotainment systems, instrument clusters) - Industrial equipment (e.g., control systems, data loggers) - Medical devices (e.g., patient monitoring systems, diagnostic equipment)

Detailed and Complete Alternative Models

• S29AL016D70TFI020: Same density, faster speed (70 ns)
• S29GL032N90TFI040: Higher density (32 Megabits), faster speed (90 ns)
• S29GL064N90TFI070: Higher density (64 Megabits), faster speed (90 ns)
• S29GL128N90TFI010: Higher density (128 Megabits), faster speed (90 ns)

(Note: The above alternative models are provided as examples and may not cover all available options.)

This entry provides a comprehensive overview of the S29AL016J55BFNR10 flash memory. It includes basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.