PTFA041501E-V4-R250

Product Category: RF Power Transistor

Basic Information Overview: - Category: Electronic Component - Use: Amplification of radio frequency signals - Characteristics: High power, high frequency operation, rugged design - Package: SMD (Surface Mount Device) - Essence: Provides high power amplification for RF signals - Packaging/Quantity: Typically packaged in reels of 250 units

Specifications: - Operating Frequency: 400-2700 MHz - Output Power: 150W - Gain: 15dB - Efficiency: 60% - Voltage: 28V - Package Type: NI-1230S-4

Detailed Pin Configuration: - Pin 1: RF Input - Pin 2: Ground - Pin 3: RF Output - Pin 4: Vcc

Functional Features: - High power amplification - Wide operating frequency range - High efficiency - Rugged and reliable design

Advantages: - Suitable for high power RF amplification - Wide frequency coverage - High efficiency leads to lower power consumption

Disadvantages: - May require additional heat dissipation measures due to high power operation - Sensitive to voltage fluctuations

Working Principles: The PTFA041501E-V4-R250 operates on the principle of amplifying radio frequency signals using a combination of active and passive components. The input RF signal is amplified and delivered at the output with increased power while maintaining signal integrity.

Detailed Application Field Plans: - Telecommunications infrastructure - Radar systems - Wireless base stations - Satellite communication systems

Detailed and Complete Alternative Models: - PTFA041501E-V4-R200 - PTFA041501E-V4-R300 - PTFA041501E-V4-R350

This RF power transistor, PTFA041501E-V4-R250, is a crucial component in various RF amplification applications due to its high power, wide frequency coverage, and efficient operation. Its rugged design and reliability make it suitable for demanding environments such as telecommunications infrastructure and radar systems.

[Word Count: 306]