Ampleon USA Inc.
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BLF6G38-25,112
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BLF6G38-25,112

Product Overview

Category: RF Power Transistor
Use: Amplification of radio frequency signals
Characteristics: High power, high efficiency, compact size
Package: SOT539A
Essence: High-frequency power amplifier
Packaging/Quantity: Tape and reel, 800 units

Specifications

  • Frequency Range: 2400-2500 MHz
  • Output Power: 25 W
  • Gain: 13.5 dB
  • Efficiency: 55%
  • Voltage: 32 V
  • Current: 10 A

Detailed Pin Configuration

  1. Gate
  2. Drain
  3. Source
  4. Ground
  5. RF Input
  6. RF Output

Functional Features

  • High power gain
  • High efficiency
  • Excellent linearity
  • Thermally enhanced package

Advantages and Disadvantages

Advantages: - High power output - Compact size - High efficiency

Disadvantages: - Requires careful thermal management - Sensitive to voltage fluctuations

Working Principles

The BLF6G38-25,112 operates on the principle of amplifying radio frequency signals using a combination of active and passive components. The input signal is amplified by controlling the flow of current through the transistor, resulting in an amplified output signal.

Detailed Application Field Plans

  1. Telecommunications: Used in base station amplifiers for wireless communication systems.
  2. Radar Systems: Employed in radar transmitters for amplifying RF signals.
  3. Industrial Heating: Utilized in RF heating applications for industrial processes.

Detailed and Complete Alternative Models

  1. BLF888A-25,112
  2. BLF7G22LS-25,112
  3. BLF578XR-25,112

Note: The alternative models listed above are similar RF power transistors with comparable specifications and performance.

This information provides a comprehensive overview of the BLF6G38-25,112 RF power transistor, including its product details, specifications, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.

10 domande e risposte comuni relative all'applicazione di BLF6G38-25,112 nelle soluzioni tecniche

  1. What is the BLF6G38-25,112?

    • The BLF6G38-25,112 is a LDMOS RF power transistor designed for use in high-power amplifiers in various applications such as wireless infrastructure and radar systems.

  2. What is the maximum frequency range for BLF6G38-25,112?

    • The BLF6G38-25,112 operates within the frequency range of 3300 MHz to 3800 MHz.

  3. What is the typical output power of BLF6G38-25,112?

    • The typical output power of BLF6G38-25,112 is around 45 watts.

  4. What are the key features of BLF6G38-25,112?

    • Some key features of BLF6G38-25,112 include high efficiency, high gain, and excellent ruggedness.

  5. What are the recommended operating conditions for BLF6G38-25,112?

    • The recommended operating voltage is typically 32 V, and the recommended operating temperature ranges from -40°C to +150°C.

  6. What are the typical applications of BLF6G38-25,112?

    • BLF6G38-25,112 is commonly used in base station transmitters, repeaters, and other high-power RF amplification systems.

  7. What is the typical gain of BLF6G38-25,112?

    • The typical gain of BLF6G38-25,112 is around 17 dB.

  8. What are the thermal characteristics of BLF6G38-25,112?

    • The thermal resistance junction to case (Rth(j-c)) is typically 0.9 °C/W.

  9. What are the recommended biasing conditions for BLF6G38-25,112?

    • The recommended biasing conditions include a quiescent current of 1000 mA and a quiescent voltage of 32 V.

  10. Are there any specific layout considerations when using BLF6G38-25,112?

    • Yes, it is important to follow the recommended layout guidelines provided in the datasheet to ensure optimal performance and reliability of the BLF6G38-25,112 in technical solutions.