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BLF6G22-180RN,112

BLF6G22-180RN,112

Product Overview

Category

The BLF6G22-180RN,112 belongs to the category of RF power transistors.

Use

It is used in high-frequency applications such as radio frequency amplifiers and transmitters.

Characteristics

  • High power handling capability
  • Broadband performance
  • High efficiency

Package

The BLF6G22-180RN,112 is typically available in a compact and durable package suitable for surface mount technology (SMT) assembly.

Essence

This product is essential for achieving high-power amplification in RF communication systems.

Packaging/Quantity

The BLF6G22-180RN,112 is usually packaged in reels or trays, with quantities varying based on customer requirements.

Specifications

  • Frequency Range: 0.1 - 3.5 GHz
  • Output Power: 180 W
  • Gain: 16 dB
  • Efficiency: >60%
  • Operating Voltage: 28 V
  • Package Type: SOT539A

Detailed Pin Configuration

The BLF6G22-180RN,112 features a detailed pin configuration with specific connections for gate, drain, and source terminals, ensuring proper integration into RF circuit designs.

Functional Features

  • High power output
  • Wide frequency coverage
  • High linearity
  • Robust construction for reliable performance

Advantages and Disadvantages

Advantages

  • High power handling capability
  • Wide frequency range coverage
  • High efficiency
  • Compact package size

Disadvantages

  • Limited availability in certain regions
  • Higher cost compared to lower power alternatives

Working Principles

The BLF6G22-180RN,112 operates based on the principles of RF power amplification, utilizing advanced semiconductor technology to deliver high power output with minimal distortion.

Detailed Application Field Plans

The BLF6G22-180RN,112 is ideally suited for use in: - Base station amplifiers - Broadcast transmitters - Radar systems - Industrial heating applications

Detailed and Complete Alternative Models

  • BLF6G20-180RN,112
  • BLF6G25-180RN,112
  • BLF6G30-180RN,112

These alternative models offer similar performance characteristics and can be considered as substitutes based on specific application requirements.

In conclusion, the BLF6G22-180RN,112 is a high-performance RF power transistor designed for demanding applications that require high power amplification across a wide frequency range. Its robust construction, efficient operation, and broad application suitability make it a valuable component in modern RF communication and industrial systems.

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